A Low Noise High Linearity RF Front End Circuits Design

Yongsheng Xu; Shuzhen You; Hui Yu; Xiaojin Li; Chunqi Shi; Zongsheng Lai

A Low Noise High Linearity RF Front End Circuits Design

Yongsheng Xu^*
, Shuzhen You
, Hui Yu
, Xiaojin Li
, Chunqi Shi
, Zongsheng Lai

^*此作品的通讯作者

通信与电子工程学院

East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

One key design of UHF receiver IC, i.e. RF front end circuit, is described. From the aspects of noise matching, linearity, impedance matching and gain, the design methodology of the integrated low noise amplifier and downconversion mixer are presented in detail. The circuits have been fabricated with a 0.8 μm silicon BiCMOS process. The overall conversion gain of the front end is 18 dB, the double-sideband noise figure is 2.5 dB, the IIP3 is +5 dBm, and the circuit takes only 3.4 mA from a 5 V supply.

源语言	英语
页（从-至）	188-193
页数	6
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	26
期	2
出版状态	已出版 - 5月 2006

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title = "A Low Noise High Linearity RF Front End Circuits Design",

abstract = "One key design of UHF receiver IC, i.e. RF front end circuit, is described. From the aspects of noise matching, linearity, impedance matching and gain, the design methodology of the integrated low noise amplifier and downconversion mixer are presented in detail. The circuits have been fabricated with a 0.8 μm silicon BiCMOS process. The overall conversion gain of the front end is 18 dB, the double-sideband noise figure is 2.5 dB, the IIP3 is +5 dBm, and the circuit takes only 3.4 mA from a 5 V supply.",

keywords = "Low noise amplifier, Mixer, RF front end, RFIC, UHF receiver IC",

author = "Yongsheng Xu and Shuzhen You and Hui Yu and Xiaojin Li and Chunqi Shi and Zongsheng Lai",

year = "2006",

month = may,

language = "英语",

volume = "26",

pages = "188--193",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

issn = "1000-3819",

publisher = "Research Progress of Solid State Electronics",

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TY - JOUR

T1 - A Low Noise High Linearity RF Front End Circuits Design

AU - Xu, Yongsheng

AU - You, Shuzhen

AU - Yu, Hui

AU - Li, Xiaojin

AU - Shi, Chunqi

AU - Lai, Zongsheng

PY - 2006/5

Y1 - 2006/5

N2 - One key design of UHF receiver IC, i.e. RF front end circuit, is described. From the aspects of noise matching, linearity, impedance matching and gain, the design methodology of the integrated low noise amplifier and downconversion mixer are presented in detail. The circuits have been fabricated with a 0.8 μm silicon BiCMOS process. The overall conversion gain of the front end is 18 dB, the double-sideband noise figure is 2.5 dB, the IIP3 is +5 dBm, and the circuit takes only 3.4 mA from a 5 V supply.

AB - One key design of UHF receiver IC, i.e. RF front end circuit, is described. From the aspects of noise matching, linearity, impedance matching and gain, the design methodology of the integrated low noise amplifier and downconversion mixer are presented in detail. The circuits have been fabricated with a 0.8 μm silicon BiCMOS process. The overall conversion gain of the front end is 18 dB, the double-sideband noise figure is 2.5 dB, the IIP3 is +5 dBm, and the circuit takes only 3.4 mA from a 5 V supply.

KW - Low noise amplifier

KW - Mixer

KW - RF front end

KW - RFIC

KW - UHF receiver IC

UR - https://www.scopus.com/pages/publications/33747155610

M3 - 文章

AN - SCOPUS:33747155610

SN - 1000-3819

VL - 26

SP - 188

EP - 193

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 2

ER -

A Low Noise High Linearity RF Front End Circuits Design

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