摘要
This paper presents a fully symmetrical capacitive accelerometer. The sensor is a sandwich structure which is fabricated by silicon four-layer bonding and packaged at wafer-level in a vacuum. The precisely controllable original capacitor gap and the bumpers of the sensor are formed by multi-oxidation. The fabricated accelerometer has the sensitivity of 0.59 V/g, the resonance frequency of 657 Hz and the quality factor of 198.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 143-146 |
| 页数 | 4 |
| 期刊 | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics |
| 卷 | 29 |
| 期 | 1 |
| 出版状态 | 已出版 - 3月 2009 |
| 已对外发布 | 是 |
指纹
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