@inproceedings{8e9fe65a3bc84839896b44a84b33ff60,
title = "A fully integrated 0.35μm SiGe power amplifier design",
abstract = "A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS technology. The presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage supply. The measured maximum output power can reach 16.52dBm, and the PAE is 17.45\% at P1dB.",
author = "Qiong Yan and Lin Hua and Shi, \{Chun Qi\} and Zhang, \{Run Xi\} and Lai, \{Zong Sheng\}",
year = "2012",
doi = "10.1109/ICSICT.2012.6467612",
language = "英语",
isbn = "9781467324724",
series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",
}