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A double active gm-boosted-based inductorless differential wideband low-noise amplifier

  • Rong Zhang
  • , Cen Chen
  • , Zhi Li
  • , Zhongqian Fu
  • , Shengxi Diao
  • , Fujiang Lin
  • University of Science and Technology of China

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

A double active gm-boosted-based inductorless differential wideband low-noise amplifier (LNA) is proposed in this paper. The proposed LNA applies two common-gate (CG) stages and the capacitive cross-coupled (CCC) technique. Moreover, a noise-cancelling architecture is adopted for low noise factor (NF). The proposed LNA is simulated in a TSMC 0.18-μm RF CMOS process.Within DC-1.2GHz, the LNA achieves 20dB S21, minimal NF (with output buffer) of 3.2dB, and IIP3 of -8.9 dBm. The power consumption is 3.6mW with 1V power supply.

源语言英语
主期刊名2015 IEEE International Wireless Symposium, IWS 2015
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781479919284
DOI
出版状态已出版 - 22 7月 2015
已对外发布
活动IEEE International Wireless Symposium, IWS 2015 - Shenzhen, 中国
期限: 30 3月 20151 4月 2015

出版系列

姓名2015 IEEE International Wireless Symposium, IWS 2015

会议

会议IEEE International Wireless Symposium, IWS 2015
国家/地区中国
Shenzhen
时期30/03/151/04/15

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