A digitally controlled power amplifier with neutralization capacitors for Zigbee™ applications

Fei Jia; Shengxi Diao; Xuejuan Zhang; Zhongqian Fu; Fujiang Lin

doi:10.1088/1674-4926/33/12/125002

A digitally controlled power amplifier with neutralization capacitors for Zigbee™ applications

Fei Jia
, Shengxi Diao^*
, Xuejuan Zhang
, Zhongqian Fu
, Fujiang Lin

^*此作品的通讯作者

University of Science and Technology of China

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

This paper presents a single chip CMOS power amplifier with neutralization capacitors for Zigbee™ system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power of a PA to be controlled by baseband signal directly, so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1% PAE at P_1dB point. The core area is 0.73 × 0.55 mm ².

源语言	英语
文章编号	125002
期刊	Journal of Semiconductors
卷	33
期	12
DOI	https://doi.org/10.1088/1674-4926/33/12/125002
出版状态	已出版 - 12月 2012
已对外发布	是

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title = "A digitally controlled power amplifier with neutralization capacitors for Zigbee{\texttrademark} applications",

abstract = "This paper presents a single chip CMOS power amplifier with neutralization capacitors for Zigbee{\texttrademark} system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power of a PA to be controlled by baseband signal directly, so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1\% PAE at P1dB point. The core area is 0.73 × 0.55 mm 2.",

keywords = "CMOS, Zigbee{\texttrademark}, digital control, neutralization, power amplifier",

author = "Fei Jia and Shengxi Diao and Xuejuan Zhang and Zhongqian Fu and Fujiang Lin",

year = "2012",

month = dec,

doi = "10.1088/1674-4926/33/12/125002",

language = "英语",

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T1 - A digitally controlled power amplifier with neutralization capacitors for Zigbee™ applications

AU - Jia, Fei

AU - Diao, Shengxi

AU - Zhang, Xuejuan

AU - Fu, Zhongqian

AU - Lin, Fujiang

PY - 2012/12

Y1 - 2012/12

N2 - This paper presents a single chip CMOS power amplifier with neutralization capacitors for Zigbee™ system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power of a PA to be controlled by baseband signal directly, so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1% PAE at P1dB point. The core area is 0.73 × 0.55 mm 2.

AB - This paper presents a single chip CMOS power amplifier with neutralization capacitors for Zigbee™ system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power of a PA to be controlled by baseband signal directly, so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1% PAE at P1dB point. The core area is 0.73 × 0.55 mm 2.

KW - CMOS

KW - Zigbee™

KW - digital control

KW - neutralization

KW - power amplifier

UR - https://www.scopus.com/pages/publications/84871393951

U2 - 10.1088/1674-4926/33/12/125002

DO - 10.1088/1674-4926/33/12/125002

M3 - 文章

AN - SCOPUS:84871393951

SN - 1674-4926

VL - 33

JO - Journal of Semiconductors

JF - Journal of Semiconductors

IS - 12

M1 - 125002

ER -

A digitally controlled power amplifier with neutralization capacitors for Zigbee™ applications

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