A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells

Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (ε_b) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (ε_b) and the reverse saturation current density (Jε_b0) is revised and the experimental data are consistent with the simulation results very well.