A comparative study of noise performance for InP HEMT

A comparative study to determine the scaling rules of noise model parameters for InP HEMT devices between 90 nm and 70 nm process is proposed in this paper. The expressions of noise model parameters in terms of four noise parameters are also derived. Both gate length and gate width scalable rules of the gate and drain noise model parameters (P and R) are discussed between 90 nm and 70 nm devices. Good agreement is obtained based on the comparison of measured and modeled noise parameters up to 45 GHz.