摘要
A 2.45-GHz RFID tag chip was designed on standard 0.25-μm CMOS process. Using only MOS devices, the low-Vt rectifier circuit produces 100μW of power with 2dBm input. The tag IC with bi-directional communication and anti-collision features can be read from a distance of up to 15cm under a reader power of 250mW. The die area of 0.79mm2 includes a 128-bit rewriteable non-volatile memory.
| 源语言 | 英语 |
|---|---|
| 文章编号 | RTU1A-4 |
| 页(从-至) | 365-368 |
| 页数 | 4 |
| 期刊 | IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers |
| 出版状态 | 已出版 - 2005 |
| 已对外发布 | 是 |
| 活动 | 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, 美国 期限: 12 6月 2005 → 14 6月 2005 |
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