摘要
Highly oriented β-FeSi2 film on Si(111) was prepared by reactive deposition solid phase epitaxy. Photoreflectance measurements have been carried out near the absorption edge at room temperature. The exact direct transition has been determined at Eg=0.871 eV. Photocurrent spectra of the sample indicated that the surface recombination velocity becomes very small due to the improvement of crystal quality.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 385-388 |
| 页数 | 4 |
| 期刊 | Solid State Communications |
| 卷 | 97 |
| 期 | 5 |
| DOI | |
| 出版状态 | 已出版 - 2月 1996 |
| 已对外发布 | 是 |
指纹
探究 'A clarification of optical transition of β-FeSi2 film' 的科研主题。它们共同构成独一无二的指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver