@inproceedings{f0d2b8f4b1a748928d3c77affce00403,
title = "A 65 nm CMOS +14 dBm-Psat and 10\%-PAE 81-86 GHz power amplifier with parallel combiner",
abstract = "This paper presents an 81-86 GHz E-band power amplifier fabricated with 65 nm CMOS process. A passive splitter is designed to transfer a pair of differential signal into two pairs of differential signals and satisfy phase requirement of output parallel power combiner. A substitution method is presented to trade off the simulation time and accuracy while using EM simulator to characterize the MOS transistor's access lines with stacked via arrays. The proposed PA achieves 9.5 dBm P1-dB, 14.16 dBm PSAT and 21.5 dB maximum power gain at 83.5 GHz. The PAEs at P1-dB and PSAT are 3.6\% and 10.13\% respectively.",
keywords = "Differential input, E-band, EM-simulation, parallel power amplifier, power splitter",
author = "Guang Zhong and Yong Huang and Runxi Zhang and Chunqi Shi",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 Asia-Pacific Microwave Conference, APMC 2015 ; Conference date: 06-12-2015 Through 09-12-2015",
year = "2015",
doi = "10.1109/APMC.2015.7413378",
language = "英语",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Fan Meng and Wei Hong and Guang-Qi Yang and Zhe Song and Xiao-Wei Zhu",
booktitle = "2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015",
address = "美国",
}