摘要
A 60 GHz transformer-coupled class AB 3-stage low power amplifier (PA) has been implemented in a 130 nm standard RF-CMOS process. The transformer, featuring direct impedance transformation and power combining is suitable for 60 GHz power amplifier design. This power amplifier operates from 1.2 V supply with 9.9 dB gain at 62 GHz, dissipates 58 mW DC power, and the reverse isolation is better than 39 dB from 50 to 67 GHz.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2487-2491 |
| 页数 | 5 |
| 期刊 | Microwave and Optical Technology Letters |
| 卷 | 57 |
| 期 | 11 |
| DOI | |
| 出版状态 | 已出版 - 1 11月 2015 |
指纹
探究 'A 60 GHz transformer-coupled neutralized low power CMOS power amplifier' 的科研主题。它们共同构成独一无二的指纹。引用此
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