@inproceedings{7519fef1cecc4858861bcb30b3efdbd8,
title = "A 25-37GHz VCO Employing Stacked-Coupled Switched Inductor and Co-Tuned Buffer in 55nm CMOS for Multi-Band 5G mmW Applications",
abstract = "This paper presents a mmW voltage-controlled oscillator (VCO) employing stacked-coupled switched differential inductor (SSDI) and hybrid analog-digital varactor array (HVA) to simultaneously achieve wide tuning range and low phase noise. A frequency co-tuned VCO buffer is also developed to minimize the VCO output power variation. Fabricated in a 55-nm CMOS process, the VCO achieves an ultra-wide frequency tuning range of 41.14\% (24.48 to 37.16 GHz) and a low phase noise of-124.91 dBc/Hz at 10 MHz offset. The FoMT is-192.67 dBc/Hz and the output power variation is less than 3 dB over the entire tuning range.",
keywords = "Voltage-controlled oscillator (VCO), phase noise, stacked-coupled switched differential inductor, tuning range",
author = "Rumeng Wang and Jinge Li and Chunqi Shi and Jinghong Chen and Runxi Zhang",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 21st IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2021 ; Conference date: 17-01-2021 Through 22-01-2021",
year = "2021",
month = jan,
day = "17",
doi = "10.1109/SiRF51851.2021.9383369",
language = "英语",
series = "2021 IEEE 21st Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "37--39",
booktitle = "2021 IEEE 21st Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2021",
address = "美国",
}