@inproceedings{1564a074bf6649a585585db6eef9cf71,
title = "A 0.8-2.5GHz wideband SiGe BiCMOS low noise amplifier with noise fiugre of 1.98-3.3dB",
abstract = "This paper presents an optimized 0.8-2.5GHz low noise amplifier for wideband applications. Based on cascade structure, a shunt resistive feedback with an emitter degeneration inductor is used. Both low noise figure and high gain are achieved simultaneously. Measured results show that the proposed LNA has a maximum gain of 19.6dB at 0.8GHz and a minimum gain of 14.3dB at 2.5GHz. The noise figure varies from 1.98 to 3.3dB among the whole band. The overall power supply is 24mw at 3V supply and the occupied die area is only 0.4mm 2.",
author = "Lin Hua and Qiong Yan and Lei Chen and Runxi Zhang and Chunqi Shi and Zongsheng Lai",
year = "2011",
doi = "10.1109/ASICON.2011.6157397",
language = "英语",
isbn = "9781612841908",
series = "Proceedings of International Conference on ASIC",
pages = "1086--1089",
booktitle = "Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011",
note = "2011 IEEE 9th International Conference on ASIC, ASICON 2011 ; Conference date: 25-10-2011 Through 28-10-2011",
}