10 Gb/s external modulator module using capacitive and inductive peaking technology

Bo Pan; Jianjun Gao; Baoxin Gao

doi:10.1117/12.444575

10 Gb/s external modulator module using capacitive and inductive peaking technology

Bo Pan^*
, Jianjun Gao
, Baoxin Gao

^*此作品的通讯作者

Tsinghua University

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

The paper focuses on analyzing the effects and principles of the capacitance and inductance peaking technology in 10 Gb/s HEMT external modulator driver module. Based on the accurate microwave monolithic integrate circuit (MMIC) inductance equivalent circuit model, the effect of inductive compensation to the gain and bandwidth of driver module is discussed. By using the technology of gate inductive peaking and drain inductive peaking, the f_T of HEMT device used in driver module reduce evidently from 54 GHz to 35 GHz.

源语言	英语
页（从-至）	272-277
页数	6
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	4603
DOI	https://doi.org/10.1117/12.444575
出版状态	已出版 - 2001
已对外发布	是
活动	Fiber Optics and Optoelectronics for Network Applications - Nanjing, 中国期限: 7 11月 2001 → 9 11月 2001

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title = "10 Gb/s external modulator module using capacitive and inductive peaking technology",

abstract = "The paper focuses on analyzing the effects and principles of the capacitance and inductance peaking technology in 10 Gb/s HEMT external modulator driver module. Based on the accurate microwave monolithic integrate circuit (MMIC) inductance equivalent circuit model, the effect of inductive compensation to the gain and bandwidth of driver module is discussed. By using the technology of gate inductive peaking and drain inductive peaking, the fT of HEMT device used in driver module reduce evidently from 54 GHz to 35 GHz.",

keywords = "Capacitive and inductive compensation, Driver, External modulator",

author = "Bo Pan and Jianjun Gao and Baoxin Gao",

year = "2001",

doi = "10.1117/12.444575",

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volume = "4603",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Fiber Optics and Optoelectronics for Network Applications ; Conference date: 07-11-2001 Through 09-11-2001",

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TY - JOUR

T1 - 10 Gb/s external modulator module using capacitive and inductive peaking technology

AU - Pan, Bo

AU - Gao, Jianjun

AU - Gao, Baoxin

PY - 2001

Y1 - 2001

N2 - The paper focuses on analyzing the effects and principles of the capacitance and inductance peaking technology in 10 Gb/s HEMT external modulator driver module. Based on the accurate microwave monolithic integrate circuit (MMIC) inductance equivalent circuit model, the effect of inductive compensation to the gain and bandwidth of driver module is discussed. By using the technology of gate inductive peaking and drain inductive peaking, the fT of HEMT device used in driver module reduce evidently from 54 GHz to 35 GHz.

AB - The paper focuses on analyzing the effects and principles of the capacitance and inductance peaking technology in 10 Gb/s HEMT external modulator driver module. Based on the accurate microwave monolithic integrate circuit (MMIC) inductance equivalent circuit model, the effect of inductive compensation to the gain and bandwidth of driver module is discussed. By using the technology of gate inductive peaking and drain inductive peaking, the fT of HEMT device used in driver module reduce evidently from 54 GHz to 35 GHz.

KW - Capacitive and inductive compensation

KW - Driver

KW - External modulator

UR - https://www.scopus.com/pages/publications/0035773312

U2 - 10.1117/12.444575

DO - 10.1117/12.444575

M3 - 会议文章

AN - SCOPUS:0035773312

SN - 0277-786X

VL - 4603

SP - 272

EP - 277

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Fiber Optics and Optoelectronics for Network Applications

Y2 - 7 November 2001 through 9 November 2001

ER -

10 Gb/s external modulator module using capacitive and inductive peaking technology

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