毫米波肖特基二极管表征和在片测试方法

Ao Zhang; Jian Jun Gao

doi:10.11972/j.issn.1001-9014.2022.05.009

毫米波肖特基二极管表征和在片测试方法

Ao Zhang
, Jian Jun Gao^*

^*此作品的通讯作者

物理与电子科学学院

Nantong University
East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

In this paper, the one-port and two-port measurement methods for millimeter wave Schottky diodes are developed, and the corresponding test structures are designed. The variation of cut-off frequency with parasitic resistance and zero bias intrinsic capacitance are analyzed. The equivalent circuit models of small signal and large signal are given. A commercial Schottky diode has been used to extract the small signal model parameters. The experimental results show that the S-parameters agree well under on and off bias condition.

投稿的翻译标题	Millimeter wave Schottky diode characterization and on-wafer measurement
源语言	繁体中文
页（从-至）	856-862
页数	7
期刊	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
卷	41
期	5
DOI	https://doi.org/10.11972/j.issn.1001-9014.2022.05.009
出版状态	已出版 - 10月 2022

关键词

Schottky diode
measurement
modeling
parameter extraction
small signal model

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10.11972/j.issn.1001-9014.2022.05.009

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引用此

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title = "毫米波肖特基二极管表征和在片测试方法",

abstract = "In this paper, the one-port and two-port measurement methods for millimeter wave Schottky diodes are developed, and the corresponding test structures are designed. The variation of cut-off frequency with parasitic resistance and zero bias intrinsic capacitance are analyzed. The equivalent circuit models of small signal and large signal are given. A commercial Schottky diode has been used to extract the small signal model parameters. The experimental results show that the S-parameters agree well under on and off bias condition.",

keywords = "Schottky diode, measurement, modeling, parameter extraction, small signal model",

author = "Ao Zhang and Gao, \{Jian Jun\}",

year = "2022",

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doi = "10.11972/j.issn.1001-9014.2022.05.009",

language = "繁体中文",

volume = "41",

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TY - JOUR

T1 - 毫米波肖特基二极管表征和在片测试方法

AU - Zhang, Ao

AU - Gao, Jian Jun

PY - 2022/10

Y1 - 2022/10

N2 - In this paper, the one-port and two-port measurement methods for millimeter wave Schottky diodes are developed, and the corresponding test structures are designed. The variation of cut-off frequency with parasitic resistance and zero bias intrinsic capacitance are analyzed. The equivalent circuit models of small signal and large signal are given. A commercial Schottky diode has been used to extract the small signal model parameters. The experimental results show that the S-parameters agree well under on and off bias condition.

AB - In this paper, the one-port and two-port measurement methods for millimeter wave Schottky diodes are developed, and the corresponding test structures are designed. The variation of cut-off frequency with parasitic resistance and zero bias intrinsic capacitance are analyzed. The equivalent circuit models of small signal and large signal are given. A commercial Schottky diode has been used to extract the small signal model parameters. The experimental results show that the S-parameters agree well under on and off bias condition.

KW - Schottky diode

KW - measurement

KW - modeling

KW - parameter extraction

KW - small signal model

UR - https://www.scopus.com/pages/publications/85139551677

U2 - 10.11972/j.issn.1001-9014.2022.05.009

DO - 10.11972/j.issn.1001-9014.2022.05.009

M3 - 文章

AN - SCOPUS:85139551677

SN - 1001-9014

VL - 41

SP - 856

EP - 862

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 5

ER -

毫米波肖特基二极管表征和在片测试方法

摘要

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