基于45 nm SOI工艺的超宽带毫米波

Yuhong Wei; Bing Huang; Xiaowei Sun; Runxi Zhang; Jian Zhang

基于45 nm SOI工艺的超宽带毫米波

Yuhong Wei
, Bing Huang
, Xiaowei Sun
, Runxi Zhang
, Jian Zhang

通信与电子工程学院

CAS - Shanghai Institute of Microsystem and Information Technology
University of Chinese Academy of Sciences
Hangzhou Dianzi University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Compact and broadband millimeter-wave (MMW) single-pole-double-throw (SPDT) switches in GlobalFoundries 45nm SOI technology was presented. A full-band SPDT switch with series and shunt structure, and a Ka-band SPDT switch with two-stages shunt transistors were included in the design. Coplanar waveguide (CPW) series stubs were adopted to realize small reactance. In addition, negative body bias technology was utilized to enhance the performance of the switch over millimeter-wave band. The fabricated chip occupied a core area of 0.35 mm ×0.16 mm. Measurement results of the full-band SPDT switch show an insertion loss less than 4 dB and isolation better than 24 dB over DC~94 GHz. For the Ka-band SPDT switch, insertion loss is 2.5~3.2 dB and isolation is better than 19 dB over 25~45 GHz.

投稿的翻译标题	Design of Ultra-broadband Millimeter-wave SPDT Switch Based on 45 nm SOI Technology
源语言	繁体中文
页（从-至）	262-267 and 273
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	38
期	4
出版状态	已出版 - 25 8月 2018

关键词

45 nm SOI
Negative body bias
Single-pole-double-throw (SPDT)
Ultra-broadband

其它文件与链接

链接到 Scopus 的出版物

引用此

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title = "基于45 nm SOI工艺的超宽带毫米波",

abstract = "Compact and broadband millimeter-wave (MMW) single-pole-double-throw (SPDT) switches in GlobalFoundries 45nm SOI technology was presented. A full-band SPDT switch with series and shunt structure, and a Ka-band SPDT switch with two-stages shunt transistors were included in the design. Coplanar waveguide (CPW) series stubs were adopted to realize small reactance. In addition, negative body bias technology was utilized to enhance the performance of the switch over millimeter-wave band. The fabricated chip occupied a core area of 0.35 mm ×0.16 mm. Measurement results of the full-band SPDT switch show an insertion loss less than 4 dB and isolation better than 24 dB over DC\textasciitilde{}94 GHz. For the Ka-band SPDT switch, insertion loss is 2.5\textasciitilde{}3.2 dB and isolation is better than 19 dB over 25\textasciitilde{}45 GHz.",

keywords = "45 nm SOI, Negative body bias, Single-pole-double-throw (SPDT), Ultra-broadband",

author = "Yuhong Wei and Bing Huang and Xiaowei Sun and Runxi Zhang and Jian Zhang",

year = "2018",

month = aug,

day = "25",

language = "繁体中文",

volume = "38",

pages = "262--267 and 273",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

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publisher = "Research Progress of Solid State Electronics",

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TY - JOUR

T1 - 基于45 nm SOI工艺的超宽带毫米波

AU - Wei, Yuhong

AU - Huang, Bing

AU - Sun, Xiaowei

AU - Zhang, Runxi

AU - Zhang, Jian

PY - 2018/8/25

Y1 - 2018/8/25

N2 - Compact and broadband millimeter-wave (MMW) single-pole-double-throw (SPDT) switches in GlobalFoundries 45nm SOI technology was presented. A full-band SPDT switch with series and shunt structure, and a Ka-band SPDT switch with two-stages shunt transistors were included in the design. Coplanar waveguide (CPW) series stubs were adopted to realize small reactance. In addition, negative body bias technology was utilized to enhance the performance of the switch over millimeter-wave band. The fabricated chip occupied a core area of 0.35 mm ×0.16 mm. Measurement results of the full-band SPDT switch show an insertion loss less than 4 dB and isolation better than 24 dB over DC~94 GHz. For the Ka-band SPDT switch, insertion loss is 2.5~3.2 dB and isolation is better than 19 dB over 25~45 GHz.

AB - Compact and broadband millimeter-wave (MMW) single-pole-double-throw (SPDT) switches in GlobalFoundries 45nm SOI technology was presented. A full-band SPDT switch with series and shunt structure, and a Ka-band SPDT switch with two-stages shunt transistors were included in the design. Coplanar waveguide (CPW) series stubs were adopted to realize small reactance. In addition, negative body bias technology was utilized to enhance the performance of the switch over millimeter-wave band. The fabricated chip occupied a core area of 0.35 mm ×0.16 mm. Measurement results of the full-band SPDT switch show an insertion loss less than 4 dB and isolation better than 24 dB over DC~94 GHz. For the Ka-band SPDT switch, insertion loss is 2.5~3.2 dB and isolation is better than 19 dB over 25~45 GHz.

KW - 45 nm SOI

KW - Negative body bias

KW - Single-pole-double-throw (SPDT)

KW - Ultra-broadband

UR - https://www.scopus.com/pages/publications/85060630583

M3 - 文章

AN - SCOPUS:85060630583

SN - 1000-3819

VL - 38

SP - 262-267 and 273

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 4

ER -

基于45 nm SOI工艺的超宽带毫米波

摘要

关键词

其它文件与链接

指纹

引用此