基于平面肖特基二极管的 75～110 GHz 宽带三倍频器芯片

Yan Chen; Fan Zhong Meng; Hao Dong Xue; Ao Zhang; Jian Jun Gao

doi:10.11972/j.issn.1001-9014.2024.06.007

基于平面肖特基二极管的 75～110 GHz 宽带三倍频器芯片

Yan Chen
, Fan Zhong Meng
, Hao Dong Xue
, Ao Zhang^*
, Jian Jun Gao

^*此作品的通讯作者

物理与电子科学学院

China Electronics Technology Group Corporation
Nantong University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Based on the GaAs planar Schottky diode process，a W band wideband frequency tripler MMIC is designed with a reverse parallel diode pair. By combining the finite element method and equivalent circuit method，an accurate equivalent circuit model of the planar Schottky diode is built in the frequency range of 10-280 GHz. The nonlinear harmonic balance tool is utilized to achieve the optimal frequency tripler design in the W band. The measurement results show that the frequency multiplication loss is less than 15 dB under 17 dBm driving power，and the efficiency up to 6. 7%. The chip size is 0. 80 mm×0. 65 mm×0.

投稿的翻译标题	75-110 GHz wideband frequency tripler chip based on planar schottky diode
源语言	繁体中文
页（从-至）	768-774
页数	7
期刊	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
卷	43
期	6
DOI	https://doi.org/10.11972/j.issn.1001-9014.2024.06.007
出版状态	已出版 - 12月 2024

关键词

frequency multiplier design
planar Schottky diode
reverse parallel diode pair

访问文件

10.11972/j.issn.1001-9014.2024.06.007

其它文件与链接

链接到 Scopus 的出版物

引用此

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title = "基于平面肖特基二极管的 75～110 GHz 宽带三倍频器芯片",

abstract = "Based on the GaAs planar Schottky diode process，a W band wideband frequency tripler MMIC is designed with a reverse parallel diode pair. By combining the finite element method and equivalent circuit method，an accurate equivalent circuit model of the planar Schottky diode is built in the frequency range of 10-280 GHz. The nonlinear harmonic balance tool is utilized to achieve the optimal frequency tripler design in the W band. The measurement results show that the frequency multiplication loss is less than 15 dB under 17 dBm driving power，and the efficiency up to 6. 7\%. The chip size is 0. 80 mm×0. 65 mm×0.",

keywords = "frequency multiplier design, planar Schottky diode, reverse parallel diode pair",

author = "Yan Chen and Meng, \{Fan Zhong\} and Xue, \{Hao Dong\} and Ao Zhang and Gao, \{Jian Jun\}",

year = "2024",

month = dec,

doi = "10.11972/j.issn.1001-9014.2024.06.007",

language = "繁体中文",

volume = "43",

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T1 - 基于平面肖特基二极管的 75～110 GHz 宽带三倍频器芯片

AU - Chen, Yan

AU - Meng, Fan Zhong

AU - Xue, Hao Dong

AU - Zhang, Ao

AU - Gao, Jian Jun

PY - 2024/12

Y1 - 2024/12

N2 - Based on the GaAs planar Schottky diode process，a W band wideband frequency tripler MMIC is designed with a reverse parallel diode pair. By combining the finite element method and equivalent circuit method，an accurate equivalent circuit model of the planar Schottky diode is built in the frequency range of 10-280 GHz. The nonlinear harmonic balance tool is utilized to achieve the optimal frequency tripler design in the W band. The measurement results show that the frequency multiplication loss is less than 15 dB under 17 dBm driving power，and the efficiency up to 6. 7%. The chip size is 0. 80 mm×0. 65 mm×0.

AB - Based on the GaAs planar Schottky diode process，a W band wideband frequency tripler MMIC is designed with a reverse parallel diode pair. By combining the finite element method and equivalent circuit method，an accurate equivalent circuit model of the planar Schottky diode is built in the frequency range of 10-280 GHz. The nonlinear harmonic balance tool is utilized to achieve the optimal frequency tripler design in the W band. The measurement results show that the frequency multiplication loss is less than 15 dB under 17 dBm driving power，and the efficiency up to 6. 7%. The chip size is 0. 80 mm×0. 65 mm×0.

KW - frequency multiplier design

KW - planar Schottky diode

KW - reverse parallel diode pair

UR - https://www.scopus.com/pages/publications/85212852388

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DO - 10.11972/j.issn.1001-9014.2024.06.007

M3 - 文章

AN - SCOPUS:85212852388

SN - 1001-9014

VL - 43

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JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 6

ER -

基于平面肖特基二极管的 75～110 GHz 宽带三倍频器芯片

摘要

关键词

访问文件

其它文件与链接

学术指纹

引用此