ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

C. Yang; X. M. Li; Y. F. Gu; W. D. Yu; X. D. Gao; Y. W. Zhang

doi:10.1063/1.2987420

ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

C. Yang
, X. M. Li
, Y. F. Gu
, W. D. Yu
, X. D. Gao
, Y. W. Zhang

CAS - Shanghai Institute of Ceramics
University of Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

ZnO based oxide system Zn_1-x-yBe_xMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.

Original language	English
Article number	112114
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2987420
State	Published - 2008
Externally published	Yes

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title = "ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV",

abstract = "ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.",

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journal = "Applied Physics Letters",

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AU - Yang, C.

AU - Li, X. M.

AU - Gu, Y. F.

AU - Yu, W. D.

AU - Gao, X. D.

AU - Zhang, Y. W.

PY - 2008

Y1 - 2008

N2 - ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.

AB - ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.

UR - https://www.scopus.com/pages/publications/52349096146

U2 - 10.1063/1.2987420

DO - 10.1063/1.2987420

M3 - 文章

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

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