Zero-field spin splitting and high-field g-factor of an asymmetrical In0.53Ga0.47As/In0.52Al0.48As quantum well

  • Yong Gang Xu
  • , Meng Lv
  • , Jian Xin Chen
  • , Tie Lin
  • , Guo Lin Yu*
  • , Ning Dai
  • , Jun Hao Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This paper investigated the magnetotransport properties of the two-dimensional electron system in an asymmetrical In0.53Ga0.47As/In0.52Al0.48As quantum well, in which the expected beatings in the Shubinikov-de Haas oscillations of the longitudinal magnetoresistance Rxx were not observed. Zero-field spin splitting was extracted by measuring the weak anti-localization effect and the high field effective g-factor, g*, was extracted by fitting the tilt angle θ-dependent spacing of spin-splitted Rxx peaks. The Dingle plot is shown to be nonlinear, which can be attributed to the long-range scattering potential from the doping Be atoms near the substrate.

Original languageEnglish
Pages (from-to)688-693
Number of pages6
JournalHongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume34
Issue number6
DOIs
StatePublished - 1 Dec 2015
Externally publishedYes

Keywords

  • G-factor
  • InGaAs/InAlAs quatum well
  • Two-dimensional electron system
  • Zero-field spin splitting

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