Yellow and red luminescence in Mg-implanted GaN epitaxial films

You Wei; Zhang Xiao-Dong; Zhang Li-Min; Yang Zhen; Bian Hai; Liu Zheng-Min

doi:10.1016/j.nimb.2007.07.023

Yellow and red luminescence in Mg-implanted GaN epitaxial films

You Wei
, Zhang Xiao-Dong
, Zhang Li-Min
, Yang Zhen
, Bian Hai
, Liu Zheng-Min^*

^*Corresponding author for this work

Lanzhou University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

X-ray diffraction (XRD), attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) and photoluminescence (PL) were applied to study yellow and red luminescence properties of as-grown and Mg-implanted n-type wurtzite GaN films grown on sapphire substrates by metal-organic chemical vapor deposition. The influence of different Mg-implanted fluences on yellow and red luminescence was studied. The as-grown GaN thin films exhibited intense broad yellow emission which reduces drastically after Mg ion implantation. A red luminescence band at approximately 750 nm appears when the Mg implantation fluence is low (10¹³ cm^-2) whereas a yellow luminescence band suddenly increases at a Mg-implanted fluence of 10¹⁶ cm^-2. The possible reasons of these phenomena are discussed.

Original language	English
Pages (from-to)	41-46
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	264
Issue number	1
DOIs	https://doi.org/10.1016/j.nimb.2007.07.023
State	Published - Nov 2007
Externally published	Yes

Keywords

Gallium nitride (GaN)
Infrared spectra
Ion implantation
Photoluminescence spectra

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10.1016/j.nimb.2007.07.023

Cite this

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title = "Yellow and red luminescence in Mg-implanted GaN epitaxial films",

abstract = "X-ray diffraction (XRD), attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) and photoluminescence (PL) were applied to study yellow and red luminescence properties of as-grown and Mg-implanted n-type wurtzite GaN films grown on sapphire substrates by metal-organic chemical vapor deposition. The influence of different Mg-implanted fluences on yellow and red luminescence was studied. The as-grown GaN thin films exhibited intense broad yellow emission which reduces drastically after Mg ion implantation. A red luminescence band at approximately 750 nm appears when the Mg implantation fluence is low (1013 cm-2) whereas a yellow luminescence band suddenly increases at a Mg-implanted fluence of 1016 cm-2. The possible reasons of these phenomena are discussed.",

keywords = "Gallium nitride (GaN), Infrared spectra, Ion implantation, Photoluminescence spectra",

author = "You Wei and Zhang Xiao-Dong and Zhang Li-Min and Yang Zhen and Bian Hai and Liu Zheng-Min",

year = "2007",

month = nov,

doi = "10.1016/j.nimb.2007.07.023",

language = "英语",

volume = "264",

pages = "41--46",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Yellow and red luminescence in Mg-implanted GaN epitaxial films

AU - Wei, You

AU - Xiao-Dong, Zhang

AU - Li-Min, Zhang

AU - Zhen, Yang

AU - Hai, Bian

AU - Zheng-Min, Liu

PY - 2007/11

Y1 - 2007/11

N2 - X-ray diffraction (XRD), attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) and photoluminescence (PL) were applied to study yellow and red luminescence properties of as-grown and Mg-implanted n-type wurtzite GaN films grown on sapphire substrates by metal-organic chemical vapor deposition. The influence of different Mg-implanted fluences on yellow and red luminescence was studied. The as-grown GaN thin films exhibited intense broad yellow emission which reduces drastically after Mg ion implantation. A red luminescence band at approximately 750 nm appears when the Mg implantation fluence is low (1013 cm-2) whereas a yellow luminescence band suddenly increases at a Mg-implanted fluence of 1016 cm-2. The possible reasons of these phenomena are discussed.

AB - X-ray diffraction (XRD), attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) and photoluminescence (PL) were applied to study yellow and red luminescence properties of as-grown and Mg-implanted n-type wurtzite GaN films grown on sapphire substrates by metal-organic chemical vapor deposition. The influence of different Mg-implanted fluences on yellow and red luminescence was studied. The as-grown GaN thin films exhibited intense broad yellow emission which reduces drastically after Mg ion implantation. A red luminescence band at approximately 750 nm appears when the Mg implantation fluence is low (1013 cm-2) whereas a yellow luminescence band suddenly increases at a Mg-implanted fluence of 1016 cm-2. The possible reasons of these phenomena are discussed.

KW - Gallium nitride (GaN)

KW - Infrared spectra

KW - Ion implantation

KW - Photoluminescence spectra

UR - https://www.scopus.com/pages/publications/35449006684

U2 - 10.1016/j.nimb.2007.07.023

DO - 10.1016/j.nimb.2007.07.023

M3 - 文章

AN - SCOPUS:35449006684

SN - 0168-583X

VL - 264

SP - 41

EP - 46

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1

ER -

Yellow and red luminescence in Mg-implanted GaN epitaxial films

Abstract

Keywords

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