Weak localization and magnetointersubband scattering effects in an Alx Ga1 − x N/GaN two-dimensional electron gas

Z. J. Qiu; Y. S. Gui; T. Lin; N. Dai; J. H. Chu; N. Tang; J. Lu; B. Shen

doi:10.1103/PhysRevB.69.125335

Weak localization and magnetointersubband scattering effects in an Al_x Ga_{1 − x} N/GaN two-dimensional electron gas

Z. J. Qiu
, Y. S. Gui
, T. Lin
, N. Dai
, J. H. Chu
, N. Tang
, J. Lu
, B. Shen

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Magnetotransport measurements have been carried out on a two-dimensional electron gas in a modulation-doped Al_0.22Ga_0.78N/GaN heterostructure. The weak localization and magnetointersubband scattering effects have been studied. The measurements show that the inelastic scattering time is inversely proportional to the temperature, following the prediction by weak localization theory. Furthermore, fitting the inelastic scattering time indicates an enhanced phase-breaking rate compared to the theoretical predication. At the same time, a magnetoresistance oscillation induced by intersubband scattering has also been observed. This magnetoresistance oscillation persists to a relatively high temperature in contrast to the Shubnikov-de Haas oscillation.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.69.125335
State	Published - 24 Mar 2004
Externally published	Yes

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title = "Weak localization and magnetointersubband scattering effects in an Alx Ga1 − x N/GaN two-dimensional electron gas",

abstract = "Magnetotransport measurements have been carried out on a two-dimensional electron gas in a modulation-doped Al0.22Ga0.78N/GaN heterostructure. The weak localization and magnetointersubband scattering effects have been studied. The measurements show that the inelastic scattering time is inversely proportional to the temperature, following the prediction by weak localization theory. Furthermore, fitting the inelastic scattering time indicates an enhanced phase-breaking rate compared to the theoretical predication. At the same time, a magnetoresistance oscillation induced by intersubband scattering has also been observed. This magnetoresistance oscillation persists to a relatively high temperature in contrast to the Shubnikov-de Haas oscillation.",

author = "Qiu, \{Z. J.\} and Gui, \{Y. S.\} and T. Lin and N. Dai and Chu, \{J. H.\} and N. Tang and J. Lu and B. Shen",

year = "2004",

month = mar,

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doi = "10.1103/PhysRevB.69.125335",

language = "英语",

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journal = "Physical Review B - Condensed Matter and Materials Physics",

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TY - JOUR

T1 - Weak localization and magnetointersubband scattering effects in an Alx Ga1 − x N/GaN two-dimensional electron gas

AU - Qiu, Z. J.

AU - Gui, Y. S.

AU - Lin, T.

AU - Dai, N.

AU - Chu, J. H.

AU - Tang, N.

AU - Lu, J.

AU - Shen, B.

PY - 2004/3/24

Y1 - 2004/3/24

N2 - Magnetotransport measurements have been carried out on a two-dimensional electron gas in a modulation-doped Al0.22Ga0.78N/GaN heterostructure. The weak localization and magnetointersubband scattering effects have been studied. The measurements show that the inelastic scattering time is inversely proportional to the temperature, following the prediction by weak localization theory. Furthermore, fitting the inelastic scattering time indicates an enhanced phase-breaking rate compared to the theoretical predication. At the same time, a magnetoresistance oscillation induced by intersubband scattering has also been observed. This magnetoresistance oscillation persists to a relatively high temperature in contrast to the Shubnikov-de Haas oscillation.

AB - Magnetotransport measurements have been carried out on a two-dimensional electron gas in a modulation-doped Al0.22Ga0.78N/GaN heterostructure. The weak localization and magnetointersubband scattering effects have been studied. The measurements show that the inelastic scattering time is inversely proportional to the temperature, following the prediction by weak localization theory. Furthermore, fitting the inelastic scattering time indicates an enhanced phase-breaking rate compared to the theoretical predication. At the same time, a magnetoresistance oscillation induced by intersubband scattering has also been observed. This magnetoresistance oscillation persists to a relatively high temperature in contrast to the Shubnikov-de Haas oscillation.

UR - https://www.scopus.com/pages/publications/2342417340

U2 - 10.1103/PhysRevB.69.125335

DO - 10.1103/PhysRevB.69.125335

M3 - 文章

AN - SCOPUS:2342417340

SN - 1098-0121

VL - 69

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 12

ER -

Weak localization and magnetointersubband scattering effects in an Al_x Ga_{1 − x} N/GaN two-dimensional electron gas

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