Weak field magnetoresistance of narrow-gap semiconductor InSb

R. Yang; K. H. Gao; Y. H. Zhang; P. P. Chen; G. Yu; L. M. Wei; T. Lin; N. Dai; J. H. Chu

doi:10.1063/1.3559900

Weak field magnetoresistance of narrow-gap semiconductor InSb

R. Yang
, K. H. Gao
, Y. H. Zhang
, P. P. Chen
, G. Yu
, L. M. Wei
, T. Lin
, N. Dai
, J. H. Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.

Original language	English
Article number	063703
Journal	Journal of Applied Physics
Volume	109
Issue number	6
DOIs	https://doi.org/10.1063/1.3559900
State	Published - 15 Mar 2011

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title = "Weak field magnetoresistance of narrow-gap semiconductor InSb",

abstract = "The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.",

author = "R. Yang and Gao, \{K. H.\} and Zhang, \{Y. H.\} and Chen, \{P. P.\} and G. Yu and Wei, \{L. M.\} and T. Lin and N. Dai and Chu, \{J. H.\}",

year = "2011",

month = mar,

day = "15",

doi = "10.1063/1.3559900",

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T1 - Weak field magnetoresistance of narrow-gap semiconductor InSb

AU - Yang, R.

AU - Gao, K. H.

AU - Zhang, Y. H.

AU - Chen, P. P.

AU - Yu, G.

AU - Wei, L. M.

AU - Lin, T.

AU - Dai, N.

AU - Chu, J. H.

PY - 2011/3/15

Y1 - 2011/3/15

N2 - The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.

AB - The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.

UR - https://www.scopus.com/pages/publications/79953662688

U2 - 10.1063/1.3559900

DO - 10.1063/1.3559900

M3 - 文章

AN - SCOPUS:79953662688

SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063703

ER -

Weak field magnetoresistance of narrow-gap semiconductor InSb

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