Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe

  • Rui Yang
  • , Kuanghong Gao
  • , Laiming Wei
  • , Xinzhi Liu
  • , Gujin Hu
  • , Guolin Yu*
  • , Tie Lin
  • , Shaoling Guo
  • , Yanfeng Wei
  • , Jianrong Yang
  • , Li He
  • , Ning Dai
  • , Junhao Chu
  • , D. G. Austing
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Magnetoconductance of a gated two-dimensional electron gas (2DEG) in an inversion layer on a p-type HgCdTe film is investigated. At strong magnetic fields, characteristic features such as the quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, the weak antilocalization effect in the ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted following Golub's model L. E. Golub, Phys. Rev. B 71, 235310 (2005). The temperature dependence of the dephasing rate is consistent with the Nyquist mechanism.

Original languageEnglish
Article number042103
JournalApplied Physics Letters
Volume99
Issue number4
DOIs
StatePublished - 25 Jul 2011

Fingerprint

Dive into the research topics of 'Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe'. Together they form a unique fingerprint.

Cite this