Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Bo Zhu; Yong Sheng Gui; Wen Zheng Zhou; Li Yan Shang; Shao Ling Guo; Jun Hao Chu; Jie Lu; Ning Tang; Bo Shen; Fu Jia Zhang

Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Bo Zhu^*
, Yong Sheng Gui
, Wen Zheng Zhou
, Li Yan Shang
, Shao Ling Guo
, Jun Hao Chu
, Jie Lu
, Ning Tang
, Bo Shen
, Fu Jia Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al_0.22Ga_0.78 N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al_0.22 Ga_0.78 N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T^-1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.

Original language	English
Pages (from-to)	2498-2503
Number of pages	6
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	55
Issue number	5
State	Published - May 2006
Externally published	Yes

Keywords

Two-dimensional electron gas; weak localization; magnetoresistance

Cite this

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title = "Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas",

abstract = "The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al0.22Ga0.78 N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al0.22 Ga0.78 N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T-1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.",

keywords = "Two-dimensional electron gas; weak localization; magnetoresistance",

author = "Bo Zhu and Gui, \{Yong Sheng\} and Zhou, \{Wen Zheng\} and Shang, \{Li Yan\} and Guo, \{Shao Ling\} and Chu, \{Jun Hao\} and Jie Lu and Ning Tang and Bo Shen and Zhang, \{Fu Jia\}",

year = "2006",

month = may,

language = "英语",

volume = "55",

pages = "2498--2503",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "5",

}

TY - JOUR

T1 - Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

AU - Zhu, Bo

AU - Gui, Yong Sheng

AU - Zhou, Wen Zheng

AU - Shang, Li Yan

AU - Guo, Shao Ling

AU - Chu, Jun Hao

AU - Lu, Jie

AU - Tang, Ning

AU - Shen, Bo

AU - Zhang, Fu Jia

PY - 2006/5

Y1 - 2006/5

N2 - The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al0.22Ga0.78 N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al0.22 Ga0.78 N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T-1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.

AB - The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al0.22Ga0.78 N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al0.22 Ga0.78 N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T-1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.

KW - Two-dimensional electron gas; weak localization; magnetoresistance

UR - https://www.scopus.com/pages/publications/33744761498

M3 - 文章

AN - SCOPUS:33744761498

SN - 1000-3290

VL - 55

SP - 2498

EP - 2503

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 5

ER -

Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Abstract

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