Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Bo Zhu; Yong Sheng Gui; Wen Zheng Zhou; Li Yan Shang; Shao Ling Guo; Jun Hao Chu; Jie Lu; Ning Tang; Bo Shen; Fu Jia Zhang

Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Bo Zhu, Yong Sheng Gui, Wen Zheng Zhou, Li Yan Shang, Shao Ling Guo, Jun Hao Chu, Jie Lu, Ning Tang, Bo Shen, Fu Jia Zhang

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al_0.22Ga_0.78 N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al_0.22 Ga_0.78 N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T^-1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.

Original language	English
Pages (from-to)	2498-2503
Number of pages	6
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	55
Issue number	5
State	Published - May 2006
Externally published	Yes

Keywords

Two-dimensional electron gas; weak localization; magnetoresistance

Cite this

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title = "Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas",

abstract = "The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al0.22Ga0.78 N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al0.22 Ga0.78 N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T-1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.",

keywords = "Two-dimensional electron gas; weak localization; magnetoresistance",

author = "Bo Zhu and Gui, \{Yong Sheng\} and Zhou, \{Wen Zheng\} and Shang, \{Li Yan\} and Guo, \{Shao Ling\} and Chu, \{Jun Hao\} and Jie Lu and Ning Tang and Bo Shen and Zhang, \{Fu Jia\}",

year = "2006",

month = may,

language = "英语",

volume = "55",

pages = "2498--2503",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Institute of Physics, Chinese Academy of Sciences",

number = "5",

}

TY - JOUR

T1 - Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

AU - Zhu, Bo

AU - Gui, Yong Sheng

AU - Zhou, Wen Zheng

AU - Shang, Li Yan

AU - Guo, Shao Ling

AU - Chu, Jun Hao

AU - Lu, Jie

AU - Tang, Ning

AU - Shen, Bo

AU - Zhang, Fu Jia

PY - 2006/5

Y1 - 2006/5

N2 - The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al0.22Ga0.78 N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al0.22 Ga0.78 N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T-1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.

AB - The weak localization and weak antilocalization effects in the coherent scattering of two dimensional electron gas(2DEG) have been observed in Al0.22Ga0.78 N/GaN heterostructures by the magneto-transport measurement. The change of magnetoresistance from positive to negative under a perpendicular low magnetic field indicates that electron spin-orbit scattering caused by crystal field exists in Al0.22 Ga0.78 N/GaN heterojunction. The relation between the spin-orbit scattering time and the temperature is discussed for 2DEG, the inelastic scattering time measured by experiment shows a strong temperature dependence according to T-1 rule, which indicates that the electron-electron scattering with small energy transfer is the dominant inelastic process.

KW - Two-dimensional electron gas; weak localization; magnetoresistance

UR - https://www.scopus.com/pages/publications/33744761498

M3 - 文章

AN - SCOPUS:33744761498

SN - 1000-3290

VL - 55

SP - 2498

EP - 2503

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 5

ER -

Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

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