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Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well

  • W. Z. Zhou
  • , T. Lin
  • , L. Y. Shang
  • , G. Yu
  • , Z. M. Huang
  • , S. L. Guo
  • , Y. S. Gui
  • , N. Dai
  • , J. H. Chu*
  • , L. J. Cui
  • , D. L. Li
  • , H. L. Gao
  • , Y. P. Zeng
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Technical Physics
  • Guangxi University
  • CAS - Institute of Semiconductors

Research output: Contribution to journalArticlepeer-review

Abstract

We have observed the weak antilocalization (WAL) and beating SdH oscillation through magnetotransport measurements performed on a heavily δ-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As single quantum well in an applied magnetic field up to 13 T and a temperature at 1.5 K. Both effects are caused by the strong Rashba spin-orbit (SO) coupling due to high structure inversion asymmetry (SIA). The Rashba SO coupling constant α and zerofield spin splitting Δ0 are estimated and the obtained values are consistent from different analysis for this sample.

Original languageEnglish
Pages (from-to)300-303
Number of pages4
JournalSolid State Communications
Volume143
Issue number6-7
DOIs
StatePublished - Aug 2007

Keywords

  • A. Quantum well
  • D. Magnetoresistance
  • D. Two-dimensional electron gas

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