Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation

J. Lu; B. Shen; N. Tang; D. J. Chen; H. Zhao; D. W. Liu; R. Zhang; Y. Shi; Y. D. Zheng; Z. J. Qiu; Y. S. Gui; B. Zhu; W. Yao; J. H. Chu; K. Hoshino; Y. Arakawa

doi:10.1063/1.1803949

Weak anti-localization of the two-dimensional electron gas in modulation-doped Al_xGa_1-xN/GaN heterostructures with two subbands occupation

J. Lu^*
, B. Shen
, N. Tang
, D. J. Chen
, H. Zhao
, D. W. Liu
, R. Zhang
, Y. Shi
, Y. D. Zheng
, Z. J. Qiu
, Y. S. Gui
, B. Zhu
, W. Yao
, J. H. Chu
, K. Hoshino
, Y. Arakawa

^*Corresponding author for this work

Nanjing University
CAS - Shanghai Institute of Technical Physics
The University of Tokyo

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al_0.22Ga_0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time τ_e, dephasing time τ_φ and spin-orbit scattering time τ_so at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.

Original language	English
Pages (from-to)	3125-3127
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1803949
State	Published - 11 Oct 2004
Externally published	Yes

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Lu, J., Shen, B., Tang, N., Chen, D. J., Zhao, H., Liu, D. W., Zhang, R., Shi, Y., Zheng, Y. D., Qiu, Z. J., Gui, Y. S., Zhu, B., Yao, W., Chu, J. H., Hoshino, K., & Arakawa, Y. (2004). Weak anti-localization of the two-dimensional electron gas in modulation-doped Al_xGa_1-xN/GaN heterostructures with two subbands occupation. Applied Physics Letters, 85(15), 3125-3127. https://doi.org/10.1063/1.1803949

@article{9585b07ae6ca439bba957b69baf6cd5b,

title = "Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation",

abstract = "Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time τe, dephasing time τφ and spin-orbit scattering time τso at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.",

author = "J. Lu and B. Shen and N. Tang and Chen, \{D. J.\} and H. Zhao and Liu, \{D. W.\} and R. Zhang and Y. Shi and Zheng, \{Y. D.\} and Qiu, \{Z. J.\} and Gui, \{Y. S.\} and B. Zhu and W. Yao and Chu, \{J. H.\} and K. Hoshino and Y. Arakawa",

year = "2004",

month = oct,

day = "11",

doi = "10.1063/1.1803949",

language = "英语",

volume = "85",

pages = "3125--3127",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

Lu, J, Shen, B, Tang, N, Chen, DJ, Zhao, H, Liu, DW, Zhang, R, Shi, Y, Zheng, YD, Qiu, ZJ, Gui, YS, Zhu, B, Yao, W, Chu, JH, Hoshino, K & Arakawa, Y 2004, 'Weak anti-localization of the two-dimensional electron gas in modulation-doped Al_xGa_1-xN/GaN heterostructures with two subbands occupation', Applied Physics Letters, vol. 85, no. 15, pp. 3125-3127. https://doi.org/10.1063/1.1803949

TY - JOUR

T1 - Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation

AU - Lu, J.

AU - Shen, B.

AU - Tang, N.

AU - Chen, D. J.

AU - Zhao, H.

AU - Liu, D. W.

AU - Zhang, R.

AU - Shi, Y.

AU - Zheng, Y. D.

AU - Qiu, Z. J.

AU - Gui, Y. S.

AU - Zhu, B.

AU - Yao, W.

AU - Chu, J. H.

AU - Hoshino, K.

AU - Arakawa, Y.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time τe, dephasing time τφ and spin-orbit scattering time τso at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.

AB - Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time τe, dephasing time τφ and spin-orbit scattering time τso at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.

UR - https://www.scopus.com/pages/publications/8644230206

U2 - 10.1063/1.1803949

DO - 10.1063/1.1803949

M3 - 文章

AN - SCOPUS:8644230206

SN - 0003-6951

VL - 85

SP - 3125

EP - 3127

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Weak anti-localization of the two-dimensional electron gas in modulation-doped Al_xGa_1-xN/GaN heterostructures with two subbands occupation

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