Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation

J. Lu; B. Shen; N. Tang; D. J. Chen; H. Zhao; D. W. Liu; R. Zhang; Y. Shi; Y. D. Zheng; Z. J. Qiu; Y. S. Gui; B. Zhu; W. Yao; J. H. Chu; K. Hoshino; Y. Arakawa

doi:10.1063/1.1803949

Weak anti-localization of the two-dimensional electron gas in modulation-doped Al_xGa_1-xN/GaN heterostructures with two subbands occupation

J. Lu, B. Shen, N. Tang, D. J. Chen, H. Zhao, D. W. Liu, R. Zhang, Y. Shi, Y. D. Zheng, Z. J. Qiu, Y. S. Gui, B. Zhu, W. Yao, J. H. Chu, K. Hoshino, Y. Arakawa

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17 Scopus citations

Abstract

Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al_0.22Ga_0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time τ_e, dephasing time τ_φ and spin-orbit scattering time τ_so at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.

Original language	English
Pages (from-to)	3125-3127
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1803949
State	Published - 11 Oct 2004
Externally published	Yes

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Lu, J., Shen, B., Tang, N., Chen, D. J., Zhao, H., Liu, D. W., Zhang, R., Shi, Y., Zheng, Y. D., Qiu, Z. J., Gui, Y. S., Zhu, B., Yao, W., Chu, J. H., Hoshino, K., & Arakawa, Y. (2004). Weak anti-localization of the two-dimensional electron gas in modulation-doped Al_xGa_1-xN/GaN heterostructures with two subbands occupation. Applied Physics Letters, 85(15), 3125-3127. https://doi.org/10.1063/1.1803949

@article{9585b07ae6ca439bba957b69baf6cd5b,

title = "Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation",

abstract = "Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time τe, dephasing time τφ and spin-orbit scattering time τso at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.",

author = "J. Lu and B. Shen and N. Tang and Chen, \{D. J.\} and H. Zhao and Liu, \{D. W.\} and R. Zhang and Y. Shi and Zheng, \{Y. D.\} and Qiu, \{Z. J.\} and Gui, \{Y. S.\} and B. Zhu and W. Yao and Chu, \{J. H.\} and K. Hoshino and Y. Arakawa",

year = "2004",

month = oct,

day = "11",

doi = "10.1063/1.1803949",

language = "英语",

volume = "85",

pages = "3125--3127",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

Lu, J, Shen, B, Tang, N, Chen, DJ, Zhao, H, Liu, DW, Zhang, R, Shi, Y, Zheng, YD, Qiu, ZJ, Gui, YS, Zhu, B, Yao, W, Chu, JH, Hoshino, K & Arakawa, Y 2004, 'Weak anti-localization of the two-dimensional electron gas in modulation-doped Al_xGa_1-xN/GaN heterostructures with two subbands occupation', Applied Physics Letters, vol. 85, no. 15, pp. 3125-3127. https://doi.org/10.1063/1.1803949

TY - JOUR

T1 - Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation

AU - Lu, J.

AU - Shen, B.

AU - Tang, N.

AU - Chen, D. J.

AU - Zhao, H.

AU - Liu, D. W.

AU - Zhang, R.

AU - Shi, Y.

AU - Zheng, Y. D.

AU - Qiu, Z. J.

AU - Gui, Y. S.

AU - Zhu, B.

AU - Yao, W.

AU - Chu, J. H.

AU - Hoshino, K.

AU - Arakawa, Y.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time τe, dephasing time τφ and spin-orbit scattering time τso at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.

AB - Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time τe, dephasing time τφ and spin-orbit scattering time τso at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.

UR - https://www.scopus.com/pages/publications/8644230206

U2 - 10.1063/1.1803949

DO - 10.1063/1.1803949

M3 - 文章

AN - SCOPUS:8644230206

SN - 0003-6951

VL - 85

SP - 3125

EP - 3127

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Weak anti-localization of the two-dimensional electron gas in modulation-doped Al_xGa_1-xN/GaN heterostructures with two subbands occupation

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