Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems

Wen Zheng Zhou; Tie Lin; Li Yan Shang; Zhi Ming Huang; Li Jie Cui; Dong Lin Li; Hong Ling Gao; Yi Ping Zeng; Shao Ling Guo; Yong Sheng Gui; Jun Hao Chu

doi:10.7498/aps.56.4099

Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems

Wen Zheng Zhou^*
, Tie Lin
, Li Yan Shang
, Zhi Ming Huang
, Li Jie Cui
, Dong Lin Li
, Hong Ling Gao
, Yi Ping Zeng
, Shao Ling Guo
, Yong Sheng Gui
, Jun Hao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Magneto-transport measurements have been carried out on three heavily Si δ-doped In_0.52Al_0.48AS/ In_0.53Ga_0.47As/In_0.52 Al_0.48As single quantum well samples in which two subbands were occupied by electrons. The weak anti-localization (WAL) has been found in such high electron mobility systems. The strong Rashba spin-orbit (SO) coupling is due to the high structure inversion asymmetry (SLA) of the quantum wells. Since the WAL theory model is so complicated in fitting our experimental results, we obtained the Rashba SO coupling constant α and the zero-field spin splitting Δ₀ by an approximate approach. The results are consistent with that obtained by the Shubnikov-de Haas (SdH) oscillation analysis. The WAL effect in high electron mobility system suggests that finding a useful approach for deducing α and Δ₀ is important in designing future spintronics devices that utilize the Rashba SO coupling.

Original language	English
Pages (from-to)	4099-4104
Number of pages	6
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	56
Issue number	7
DOIs	https://doi.org/10.7498/aps.56.4099
State	Published - Jul 2007

Keywords

InAlAS/ InGaAs/ InAlAs
SdH oscillation
Two-dimensional electron gas
Weak anti-localization

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10.7498/aps.56.4099

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@article{9751a8eb8b3f4d8cab058b30a5469ea1,

title = "Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems",

abstract = "Magneto-transport measurements have been carried out on three heavily Si δ-doped In0.52Al0.48AS/ In0.53Ga0.47As/In0.52 Al0.48As single quantum well samples in which two subbands were occupied by electrons. The weak anti-localization (WAL) has been found in such high electron mobility systems. The strong Rashba spin-orbit (SO) coupling is due to the high structure inversion asymmetry (SLA) of the quantum wells. Since the WAL theory model is so complicated in fitting our experimental results, we obtained the Rashba SO coupling constant α and the zero-field spin splitting Δ0 by an approximate approach. The results are consistent with that obtained by the Shubnikov-de Haas (SdH) oscillation analysis. The WAL effect in high electron mobility system suggests that finding a useful approach for deducing α and Δ0 is important in designing future spintronics devices that utilize the Rashba SO coupling.",

keywords = "InAlAS/ InGaAs/ InAlAs, SdH oscillation, Two-dimensional electron gas, Weak anti-localization",

author = "Zhou, \{Wen Zheng\} and Tie Lin and Shang, \{Li Yan\} and Huang, \{Zhi Ming\} and Cui, \{Li Jie\} and Li, \{Dong Lin\} and Gao, \{Hong Ling\} and Zeng, \{Yi Ping\} and Guo, \{Shao Ling\} and Gui, \{Yong Sheng\} and Chu, \{Jun Hao\}",

year = "2007",

month = jul,

doi = "10.7498/aps.56.4099",

language = "英语",

volume = "56",

pages = "4099--4104",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "7",

}

TY - JOUR

T1 - Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems

AU - Zhou, Wen Zheng

AU - Lin, Tie

AU - Shang, Li Yan

AU - Huang, Zhi Ming

AU - Cui, Li Jie

AU - Li, Dong Lin

AU - Gao, Hong Ling

AU - Zeng, Yi Ping

AU - Guo, Shao Ling

AU - Gui, Yong Sheng

AU - Chu, Jun Hao

PY - 2007/7

Y1 - 2007/7

N2 - Magneto-transport measurements have been carried out on three heavily Si δ-doped In0.52Al0.48AS/ In0.53Ga0.47As/In0.52 Al0.48As single quantum well samples in which two subbands were occupied by electrons. The weak anti-localization (WAL) has been found in such high electron mobility systems. The strong Rashba spin-orbit (SO) coupling is due to the high structure inversion asymmetry (SLA) of the quantum wells. Since the WAL theory model is so complicated in fitting our experimental results, we obtained the Rashba SO coupling constant α and the zero-field spin splitting Δ0 by an approximate approach. The results are consistent with that obtained by the Shubnikov-de Haas (SdH) oscillation analysis. The WAL effect in high electron mobility system suggests that finding a useful approach for deducing α and Δ0 is important in designing future spintronics devices that utilize the Rashba SO coupling.

AB - Magneto-transport measurements have been carried out on three heavily Si δ-doped In0.52Al0.48AS/ In0.53Ga0.47As/In0.52 Al0.48As single quantum well samples in which two subbands were occupied by electrons. The weak anti-localization (WAL) has been found in such high electron mobility systems. The strong Rashba spin-orbit (SO) coupling is due to the high structure inversion asymmetry (SLA) of the quantum wells. Since the WAL theory model is so complicated in fitting our experimental results, we obtained the Rashba SO coupling constant α and the zero-field spin splitting Δ0 by an approximate approach. The results are consistent with that obtained by the Shubnikov-de Haas (SdH) oscillation analysis. The WAL effect in high electron mobility system suggests that finding a useful approach for deducing α and Δ0 is important in designing future spintronics devices that utilize the Rashba SO coupling.

KW - InAlAS/ InGaAs/ InAlAs

KW - SdH oscillation

KW - Two-dimensional electron gas

KW - Weak anti-localization

UR - https://www.scopus.com/pages/publications/34547629057

U2 - 10.7498/aps.56.4099

DO - 10.7498/aps.56.4099

M3 - 文章

AN - SCOPUS:34547629057

SN - 1000-3290

VL - 56

SP - 4099

EP - 4104

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 7

ER -

Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems

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