W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention

Cheng Peng; Liangcai Wu; Feng Rao; Zhitang Song; Pingxiong Yang; Hongjia Song; Kun Ren; Xilin Zhou; Min Zhu; Bo Liu; Junhao Chu

doi:10.1063/1.4754138

W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention

Cheng Peng^*
, Liangcai Wu
, Feng Rao
, Zhitang Song
, Pingxiong Yang
, Hongjia Song
, Kun Ren
, Xilin Zhou
, Min Zhu
, Bo Liu
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb ₂Te increase markedly by W doping. The W _x(Sb ₂Te) _1-x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster SET speed and better operation stability for the application in practical device. PCM device based on W _0.07(Sb ₂Te) _0.93 shows ultrafast SET operation (6 ns) and good endurance (1.8 × 10 ⁵ cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.

Original language	English
Article number	122108
Journal	Applied Physics Letters
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.4754138
State	Published - 17 Sep 2012

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title = "W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention",

abstract = "W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb 2Te increase markedly by W doping. The W x(Sb 2Te) 1-x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster SET speed and better operation stability for the application in practical device. PCM device based on W 0.07(Sb 2Te) 0.93 shows ultrafast SET operation (6 ns) and good endurance (1.8 × 10 5 cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.",

author = "Cheng Peng and Liangcai Wu and Feng Rao and Zhitang Song and Pingxiong Yang and Hongjia Song and Kun Ren and Xilin Zhou and Min Zhu and Bo Liu and Junhao Chu",

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T1 - W-Sb-Te phase-change material

T2 - A candidate for the trade-off between programming speed and data retention

AU - Peng, Cheng

AU - Wu, Liangcai

AU - Rao, Feng

AU - Song, Zhitang

AU - Yang, Pingxiong

AU - Song, Hongjia

AU - Ren, Kun

AU - Zhou, Xilin

AU - Zhu, Min

AU - Liu, Bo

AU - Chu, Junhao

PY - 2012/9/17

Y1 - 2012/9/17

N2 - W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb 2Te increase markedly by W doping. The W x(Sb 2Te) 1-x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster SET speed and better operation stability for the application in practical device. PCM device based on W 0.07(Sb 2Te) 0.93 shows ultrafast SET operation (6 ns) and good endurance (1.8 × 10 5 cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.

AB - W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb 2Te increase markedly by W doping. The W x(Sb 2Te) 1-x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster SET speed and better operation stability for the application in practical device. PCM device based on W 0.07(Sb 2Te) 0.93 shows ultrafast SET operation (6 ns) and good endurance (1.8 × 10 5 cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.

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U2 - 10.1063/1.4754138

DO - 10.1063/1.4754138

M3 - 文章

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SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122108

ER -

W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention

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