Voltage-controlled slow light in asymmetry double quantum dots

The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100 Gbits/s optical network, numerical calculation infers group velocity as low as 300 m/s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.