Voltage-controlled change of MIS reflectivity in visible and near infrared band

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Voltage-induced reflective changes of Pt/BLT/Si and Pt/STO/Si are investigated in visible and near infrared band. A theoretic calculation of inversion layer plasmons is set up. The most sensitive optical band and the voltage value interval causing fastest change rate are indicated. Some variance regularities are described, and this study provides the basically theoretical support for the application of an optical readout infrared imaging device: MFIS.

Original languageEnglish
Title of host publicationSixth International Conference on Thin Film Physics and Applications
DOIs
StatePublished - 2008
Externally publishedYes
Event6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China
Duration: 25 Sep 200728 Sep 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6984
ISSN (Print)0277-786X

Conference

Conference6th International Conference on Thin Film Physics and Applications, TFPA 2007
Country/TerritoryChina
CityShanghai
Period25/09/0728/09/07

Keywords

  • MIS
  • Plasmon
  • Reflectivity change

Fingerprint

Dive into the research topics of 'Voltage-controlled change of MIS reflectivity in visible and near infrared band'. Together they form a unique fingerprint.

Cite this