TY - JOUR
T1 - Visible Brillouin-quadratic microlaser in a high-Q thin-film lithium niobate microdisk
AU - Luo, Xiaochao
AU - Li, Chuntao
AU - Huang, Xingzhao
AU - Lin, Jintian
AU - Gao, Renhong
AU - Yao, Yifei
AU - Qiu, Yingnuo
AU - Yang, Yixuan
AU - Wang, Lei
AU - Yu, Huakang
AU - Cheng, Ya
N1 - Publisher Copyright:
© The Author(s) 2025.
PY - 2025/12
Y1 - 2025/12
N2 - Narrow-linewidth lasers at short/visible wavelengths are crucial for quantum and atomic applications. However, such lasers are often accessible in bulky tabletop systems and remain scarce in on-chip photonic platforms. Here, we report an on-chip visible Brillouin-quadratic microlaser in a 117-μm-diameter thin-film lithium niobate (TFLN) microdisk via dispersion engineering. Enabled by the ultra-high optical Q factor of 4.0×106, high optical mode density, small mode volume, strong photon-phonon interaction and high second-order nonlinearity of the TFLN microdisk, simultaneous generation of Stokes Brillouin lasing (SBL) with 10.17 GHz Brillouin shift and its second harmonic generation (SHG) are demonstrated, exhibiting a low threshold of only 1.81 mW. Further measurement confirms the intrinsic narrow-linewidths of both the SBL (~ 254 Hz) and the SHG (~ 864 Hz) along with a normalized frequency-double efficiency of 3.61%/mW. This demonstration of an on-chip ultra-narrow linewidth bi-chromatic Brillouin laser paves the way for on-chip quantum information processing and precise metrology.
AB - Narrow-linewidth lasers at short/visible wavelengths are crucial for quantum and atomic applications. However, such lasers are often accessible in bulky tabletop systems and remain scarce in on-chip photonic platforms. Here, we report an on-chip visible Brillouin-quadratic microlaser in a 117-μm-diameter thin-film lithium niobate (TFLN) microdisk via dispersion engineering. Enabled by the ultra-high optical Q factor of 4.0×106, high optical mode density, small mode volume, strong photon-phonon interaction and high second-order nonlinearity of the TFLN microdisk, simultaneous generation of Stokes Brillouin lasing (SBL) with 10.17 GHz Brillouin shift and its second harmonic generation (SHG) are demonstrated, exhibiting a low threshold of only 1.81 mW. Further measurement confirms the intrinsic narrow-linewidths of both the SBL (~ 254 Hz) and the SHG (~ 864 Hz) along with a normalized frequency-double efficiency of 3.61%/mW. This demonstration of an on-chip ultra-narrow linewidth bi-chromatic Brillouin laser paves the way for on-chip quantum information processing and precise metrology.
UR - https://www.scopus.com/pages/publications/105026217370
U2 - 10.1038/s41467-025-66647-2
DO - 10.1038/s41467-025-66647-2
M3 - 文章
C2 - 41271750
AN - SCOPUS:105026217370
SN - 2041-1723
VL - 16
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 11533
ER -