Very low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regime

We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V₀)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble gate electrodes. The physical analysis of a gate stack in this V₀ regime confirms the absence of metallic nanofilaments. These findings pave the way for the realization of ultralow switching power RRAM devices.