TY - JOUR
T1 - Van der Waals ferroelectric transistors
T2 - the all-round artificial synapses for high-precision neuromorphic computing
AU - Wang, Zhongwang
AU - Zhou, Xuefan
AU - Liu, Xiaochi
AU - Qiu, Aocheng
AU - Gao, Caifang
AU - Yuan, Yahua
AU - Jing, Yumei
AU - Zhang, Dou
AU - Li, Wenwu
AU - Luo, Hang
AU - Chu, Junhao
AU - Sun, Jian
N1 - Publisher Copyright:
© 2023 The Author(s)
PY - 2023/6
Y1 - 2023/6
N2 - State number, operation power, dynamic range and conductance weight update linearity are key synaptic device performance metrics for high-accuracy and low-power-consumption neuromorphic computing in hardware. However, high linearity and low power consumption couldn't be simultaneously achieved by most of the reported synaptic devices, which limits the performance of the hardware. This work demonstrates van der Waals (vdW) stacked ferroelectric field-effect transistors (FeFET) with single-crystalline ferroelectric nanoflakes. Ferroelectrics are of fine vdW interface and partial polarization switching of multi-domains under electric field pulses, which makes the FeFETs exhibit multi-state memory characteristics and excellent synaptic plasticity. They also exhibit a desired linear conductance weight update with 128 conductance states, a sufficiently high dynamic range of Gmax/Gmin > 120, and a low power consumption of 10 fJ/spike using identical pulses. Based on such an all-round device, a two-layer artificial neural network was built to conduct Modified National Institute of Standards and Technology (MNIST) digital numbers and electrocardiogram (ECG) pattern-recognition simulations, with the high accuracies reaching 97.6% and 92.4%, respectively. The remarkable performance demonstrates that vdW-FeFET is of obvious advantages in high-precision neuromorphic computing applications.
AB - State number, operation power, dynamic range and conductance weight update linearity are key synaptic device performance metrics for high-accuracy and low-power-consumption neuromorphic computing in hardware. However, high linearity and low power consumption couldn't be simultaneously achieved by most of the reported synaptic devices, which limits the performance of the hardware. This work demonstrates van der Waals (vdW) stacked ferroelectric field-effect transistors (FeFET) with single-crystalline ferroelectric nanoflakes. Ferroelectrics are of fine vdW interface and partial polarization switching of multi-domains under electric field pulses, which makes the FeFETs exhibit multi-state memory characteristics and excellent synaptic plasticity. They also exhibit a desired linear conductance weight update with 128 conductance states, a sufficiently high dynamic range of Gmax/Gmin > 120, and a low power consumption of 10 fJ/spike using identical pulses. Based on such an all-round device, a two-layer artificial neural network was built to conduct Modified National Institute of Standards and Technology (MNIST) digital numbers and electrocardiogram (ECG) pattern-recognition simulations, with the high accuracies reaching 97.6% and 92.4%, respectively. The remarkable performance demonstrates that vdW-FeFET is of obvious advantages in high-precision neuromorphic computing applications.
KW - Artificial synapses
KW - Ferroelectric
KW - Ferroelectric transistors
KW - Neuromorphic computing
KW - van der Waals heterostructures
UR - https://www.scopus.com/pages/publications/85173099326
U2 - 10.1016/j.chip.2023.100044
DO - 10.1016/j.chip.2023.100044
M3 - 文章
AN - SCOPUS:85173099326
SN - 2709-4723
VL - 2
JO - Chip
JF - Chip
IS - 2
M1 - 100044
ER -