Unipolar recovery of dielectric breakdown in fully silicided high- κ gate stack devices and its reliability implications

N. Raghavan; K. L. Pey; W. H. Liu; X. Wu; X. Li

doi:10.1063/1.3374450

Unipolar recovery of dielectric breakdown in fully silicided high- κ gate stack devices and its reliability implications

N. Raghavan^*
, K. L. Pey
, W. H. Liu
, X. Wu
, X. Li

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report observations of unipolar recovery of dielectric breakdown in fully silicided NiSi-gate HfSiON- SiO_x bilayer dielectric based high- κ metal-insulator-semiconductor (MIS) gate stack, analogous to resistive switching in metal-insulator-metal (MIM) nonvolatile memory devices. The dependence of the recovery voltage on breakdown hardness and filament location is analyzed and the physics behind MIS recovery, governed by joule heating induced oxygen vacancy trap passivation, is explained using failure analysis and statistical investigations. The observed MIS recovery phenomenon can be a tool to design for reliability in novel metal gate high- κ gate stacks.

Original language	English
Article number	142901
Journal	Applied Physics Letters
Volume	96
Issue number	14
DOIs	https://doi.org/10.1063/1.3374450
State	Published - 2010
Externally published	Yes

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title = "Unipolar recovery of dielectric breakdown in fully silicided high- κ gate stack devices and its reliability implications",

abstract = "We report observations of unipolar recovery of dielectric breakdown in fully silicided NiSi-gate HfSiON- SiOx bilayer dielectric based high- κ metal-insulator-semiconductor (MIS) gate stack, analogous to resistive switching in metal-insulator-metal (MIM) nonvolatile memory devices. The dependence of the recovery voltage on breakdown hardness and filament location is analyzed and the physics behind MIS recovery, governed by joule heating induced oxygen vacancy trap passivation, is explained using failure analysis and statistical investigations. The observed MIS recovery phenomenon can be a tool to design for reliability in novel metal gate high- κ gate stacks.",

author = "N. Raghavan and Pey, \{K. L.\} and Liu, \{W. H.\} and X. Wu and X. Li",

year = "2010",

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language = "英语",

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journal = "Applied Physics Letters",

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T1 - Unipolar recovery of dielectric breakdown in fully silicided high- κ gate stack devices and its reliability implications

AU - Raghavan, N.

AU - Pey, K. L.

AU - Liu, W. H.

AU - Wu, X.

AU - Li, X.

PY - 2010

Y1 - 2010

N2 - We report observations of unipolar recovery of dielectric breakdown in fully silicided NiSi-gate HfSiON- SiOx bilayer dielectric based high- κ metal-insulator-semiconductor (MIS) gate stack, analogous to resistive switching in metal-insulator-metal (MIM) nonvolatile memory devices. The dependence of the recovery voltage on breakdown hardness and filament location is analyzed and the physics behind MIS recovery, governed by joule heating induced oxygen vacancy trap passivation, is explained using failure analysis and statistical investigations. The observed MIS recovery phenomenon can be a tool to design for reliability in novel metal gate high- κ gate stacks.

AB - We report observations of unipolar recovery of dielectric breakdown in fully silicided NiSi-gate HfSiON- SiOx bilayer dielectric based high- κ metal-insulator-semiconductor (MIS) gate stack, analogous to resistive switching in metal-insulator-metal (MIM) nonvolatile memory devices. The dependence of the recovery voltage on breakdown hardness and filament location is analyzed and the physics behind MIS recovery, governed by joule heating induced oxygen vacancy trap passivation, is explained using failure analysis and statistical investigations. The observed MIS recovery phenomenon can be a tool to design for reliability in novel metal gate high- κ gate stacks.

UR - https://www.scopus.com/pages/publications/77951199639

U2 - 10.1063/1.3374450

DO - 10.1063/1.3374450

M3 - 文章

AN - SCOPUS:77951199639

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142901

ER -

Unipolar recovery of dielectric breakdown in fully silicided high- κ gate stack devices and its reliability implications

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