Unconventional Spin Currents in Noncollinear Antiferromagnet Mn3Ge

Cuimei Cao, Shiwei Chen, Nian Xie, Jinsen Chen, Zhe Guo*, Hui Zhang, Zheng Li, Yihan Wang, Xuepeng Qiu, Shiheng Liang, Qingfeng Zhan*, Long You*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Unconventional spin-orbit torque (SOT) has garnered significant attention due to its potential for enabling energy-efficient and deterministic control of magnetization states. Noncollinear antiferromagnets (NCAFs) are considered ideal systems for generating such unconventional SOTs, making them highly promising for the development of next-generation spintronic devices. In this study, we report the generation of spin torques in noncollinear antiferromagnetic Mn3Ge, revealing the presence of unconventional spin polarizations (specifically, x- and z-polarized spin currents) by employing the spin-torque ferromagnetic resonance (ST-FMR) technique. All-electric SOT switching was successfully demonstrated in a Mn3Ge-based device with perpendicular magnetic anisotropy (PMA), with a critical current density of 4.2 × 106 A/cm2. Furthermore, the device exhibits memristive behavior that effectively emulates the functionality of artificial synapses in convolutional neural networks (CNNs), achieving an accuracy of 92.5% in digital recognition tasks. These results are expected to pave the way toward next-generation fast and energy-efficient memory and neuromorphic computing.

Original languageEnglish
Pages (from-to)9477-9484
Number of pages8
JournalNano Letters
Volume25
Issue number23
DOIs
StatePublished - 11 Jun 2025

Keywords

  • all-electric SOT switching
  • noncollinear antiferromagnet
  • spin−orbit torque
  • synaptic plasticity
  • unconventional spin torque

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