TY - JOUR
T1 - Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides
AU - Sui, Fengrui
AU - Yu, Yilun
AU - Chen, Ju
AU - Qi, Ruijuan
AU - Ge, Rui
AU - Zheng, Yufan
AU - Liu, Beituo
AU - Jin, Rong
AU - Gong, Shijing
AU - Yue, Fangyu
AU - Chu, Junhao
N1 - Publisher Copyright:
© The Author(s) 2025.
PY - 2025/12
Y1 - 2025/12
N2 - Fundamentally, ferroelectrics must belong to a noncentrosymmetric space group, limiting the exploration of more new ferroelectric materials. We circumvent this limitation by triggering structure distortion and inducing ferroelectricity in centrosymmetric van der Waals group-IV monochalcogenide GeSe semiconductor that features unexpected intrinsic out-of-plane antiferroelectricity. Double-type and single-type hysteresis loops from electric measurements, bonding distortion observed in in-situ atomic imaging, and perpendicular polarization uncovered by first-principles calculations, confirm the intrinsic out-of-plane antiferroelectricity and the antiferroelectric–ferroelectric transition induced by the vertical external electric-field. The hidden out-of-plane antiferroelectricity and field induced ferroelectric polarization in spatial-inversion symmetric GeSe makes it a new member of van der Waals layered semiconductors with both in-plane and out-of-plane ferroelectricity, and possibly, can be extended to all group-IV monochalcogenides and other centrosymmetric van der Waals layered materials.
AB - Fundamentally, ferroelectrics must belong to a noncentrosymmetric space group, limiting the exploration of more new ferroelectric materials. We circumvent this limitation by triggering structure distortion and inducing ferroelectricity in centrosymmetric van der Waals group-IV monochalcogenide GeSe semiconductor that features unexpected intrinsic out-of-plane antiferroelectricity. Double-type and single-type hysteresis loops from electric measurements, bonding distortion observed in in-situ atomic imaging, and perpendicular polarization uncovered by first-principles calculations, confirm the intrinsic out-of-plane antiferroelectricity and the antiferroelectric–ferroelectric transition induced by the vertical external electric-field. The hidden out-of-plane antiferroelectricity and field induced ferroelectric polarization in spatial-inversion symmetric GeSe makes it a new member of van der Waals layered semiconductors with both in-plane and out-of-plane ferroelectricity, and possibly, can be extended to all group-IV monochalcogenides and other centrosymmetric van der Waals layered materials.
UR - https://www.scopus.com/pages/publications/85218503114
U2 - 10.1038/s41467-025-57138-5
DO - 10.1038/s41467-025-57138-5
M3 - 文章
C2 - 39979306
AN - SCOPUS:85218503114
SN - 2041-1723
VL - 16
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 1810
ER -