Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt-Ti-SiO2-Si wafer

J. Yu; J. L. Sun; X. J. Meng; Z. M. Huang; J. H. Chu; D. Y. Tang; C. Y. Jin; G. Li; W. Y. Li; Q. Liang

doi:10.1063/1.1394903

Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO₃ thin films on Pt-Ti-SiO₂-Si wafer

J. Yu, J. L. Sun, X. J. Meng, Z. M. Huang, J. H. Chu, D. Y. Tang, C. Y. Jin, G. Li, W. Y. Li, Q. Liang

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The optical constants of highly (100)-oriented LaNiO₃ thin films on Pt(111)-Ti-SiO₂-Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO₃, two harmonic oscillators are observed, one is believed to come from the valence-conduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron-electron interaction. Based on these optical and electrical properties, a promising application of LaNiO₃ thin films in infrared microsensors has been proposed.

Original language	English
Pages (from-to)	2699-2702
Number of pages	4
Journal	Journal of Applied Physics
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.1394903
State	Published - 15 Sep 2001
Externally published	Yes

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title = "Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt-Ti-SiO2-Si wafer",

abstract = "The optical constants of highly (100)-oriented LaNiO3 thin films on Pt(111)-Ti-SiO2-Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO3, two harmonic oscillators are observed, one is believed to come from the valence-conduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron-electron interaction. Based on these optical and electrical properties, a promising application of LaNiO3 thin films in infrared microsensors has been proposed.",

author = "J. Yu and Sun, \{J. L.\} and Meng, \{X. J.\} and Huang, \{Z. M.\} and Chu, \{J. H.\} and Tang, \{D. Y.\} and Jin, \{C. Y.\} and G. Li and Li, \{W. Y.\} and Q. Liang",

year = "2001",

month = sep,

day = "15",

doi = "10.1063/1.1394903",

language = "英语",

volume = "90",

pages = "2699--2702",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt-Ti-SiO2-Si wafer

AU - Yu, J.

AU - Sun, J. L.

AU - Meng, X. J.

AU - Huang, Z. M.

AU - Chu, J. H.

AU - Tang, D. Y.

AU - Jin, C. Y.

AU - Li, G.

AU - Li, W. Y.

AU - Liang, Q.

PY - 2001/9/15

Y1 - 2001/9/15

N2 - The optical constants of highly (100)-oriented LaNiO3 thin films on Pt(111)-Ti-SiO2-Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO3, two harmonic oscillators are observed, one is believed to come from the valence-conduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron-electron interaction. Based on these optical and electrical properties, a promising application of LaNiO3 thin films in infrared microsensors has been proposed.

AB - The optical constants of highly (100)-oriented LaNiO3 thin films on Pt(111)-Ti-SiO2-Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO3, two harmonic oscillators are observed, one is believed to come from the valence-conduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron-electron interaction. Based on these optical and electrical properties, a promising application of LaNiO3 thin films in infrared microsensors has been proposed.

UR - https://www.scopus.com/pages/publications/0035883980

U2 - 10.1063/1.1394903

DO - 10.1063/1.1394903

M3 - 文章

AN - SCOPUS:0035883980

SN - 0021-8979

VL - 90

SP - 2699

EP - 2702

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO₃ thin films on Pt-Ti-SiO₂-Si wafer

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