Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

Xudong Wang; Peng Wang; Jianlu Wang; Weida Hu; Xiaohao Zhou; Nan Guo; Hai Huang; Shuo Sun; Hong Shen; Tie Lin; Minghua Tang; Lei Liao; Anquan Jiang; Jinglan Sun; Xiangjian Meng; Xiaoshuang Chen; Wei Lu; Junhao Chu

doi:10.1002/adma.201503340

Ultrasensitive and Broadband MoS₂ Photodetector Driven by Ferroelectrics

Xudong Wang
, Peng Wang
, Jianlu Wang^*
, Weida Hu
, Xiaohao Zhou
, Nan Guo
, Hai Huang
, Shuo Sun
, Hong Shen
, Tie Lin
, Minghua Tang
, Lei Liao
, Anquan Jiang
, Jinglan Sun
, Xiangjian Meng
, Xiaoshuang Chen
, Wei Lu
, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

811 Scopus citations

Abstract

A few-layer MoS₂ photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10¹² Jones and 2570 A W^-1, respectively, at 635 nm with ZERO gate bias. E_g of MoS₂ is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).

Original language	English
Pages (from-to)	6575-6581
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	42
DOIs	https://doi.org/10.1002/adma.201503340
State	Published - 1 Nov 2015
Externally published	Yes

Keywords

2D materials, MoS transistors
ferroelectrics
photodetectors
photoresponsitivity

Access to Document

10.1002/adma.201503340

Cite this

@article{ff9614dd15a54009acd3b6856b5b0d85,

title = "Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics",

abstract = "A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 1012 Jones and 2570 A W-1, respectively, at 635 nm with ZERO gate bias. Eg of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).",

keywords = "2D materials, MoS transistors, ferroelectrics, photodetectors, photoresponsitivity",

author = "Xudong Wang and Peng Wang and Jianlu Wang and Weida Hu and Xiaohao Zhou and Nan Guo and Hai Huang and Shuo Sun and Hong Shen and Tie Lin and Minghua Tang and Lei Liao and Anquan Jiang and Jinglan Sun and Xiangjian Meng and Xiaoshuang Chen and Wei Lu and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2015 Wiley-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

month = nov,

day = "1",

doi = "10.1002/adma.201503340",

language = "英语",

volume = "27",

pages = "6575--6581",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "42",

}

TY - JOUR

T1 - Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

AU - Wang, Xudong

AU - Wang, Peng

AU - Wang, Jianlu

AU - Hu, Weida

AU - Zhou, Xiaohao

AU - Guo, Nan

AU - Huang, Hai

AU - Sun, Shuo

AU - Shen, Hong

AU - Lin, Tie

AU - Tang, Minghua

AU - Liao, Lei

AU - Jiang, Anquan

AU - Sun, Jinglan

AU - Meng, Xiangjian

AU - Chen, Xiaoshuang

AU - Lu, Wei

AU - Chu, Junhao

PY - 2015/11/1

Y1 - 2015/11/1

N2 - A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 1012 Jones and 2570 A W-1, respectively, at 635 nm with ZERO gate bias. Eg of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).

AB - A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 1012 Jones and 2570 A W-1, respectively, at 635 nm with ZERO gate bias. Eg of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).

KW - 2D materials, MoS transistors

KW - ferroelectrics

KW - photodetectors

KW - photoresponsitivity

UR - https://www.scopus.com/pages/publications/84947041587

U2 - 10.1002/adma.201503340

DO - 10.1002/adma.201503340

M3 - 文章

AN - SCOPUS:84947041587

SN - 0935-9648

VL - 27

SP - 6575

EP - 6581

JO - Advanced Materials

JF - Advanced Materials

IS - 42

ER -

Ultrasensitive and Broadband MoS₂ Photodetector Driven by Ferroelectrics

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this