Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase

Wen Di Zhang; Bing Li; Wei Wei Wang; Xing Ya Wang; Yan Cheng; An Quan Jiang

doi:10.1007/s40820-025-01841-x

Ultrahigh Dielectric Permittivity of a Micron-Sized Hf_0.5Zr_0.5O₂ Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase

Wen Di Zhang
, Bing Li
, Wei Wei Wang
, Xing Ya Wang
, Yan Cheng^*
, An Quan Jiang^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf_0.5Zr_0.5O₂ thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density of the capacitor is as high as 183 μC cm^-2 at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 10¹² without inducing dielectric breakdown.

Original language	English
Article number	6
Journal	Nano-Micro Letters
Volume	18
Issue number	1
DOIs	https://doi.org/10.1007/s40820-025-01841-x
State	Published - Dec 2026

Keywords

Charge storage
HfZrO thin film
Near-edge plasma treatment
Oxygen vacancy
Ultrahigh dielectric permittivity

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10.1007/s40820-025-01841-x

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title = "Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase",

abstract = "Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density of the capacitor is as high as 183 μC cm-2 at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 1012 without inducing dielectric breakdown.",

keywords = "Charge storage, HfZrO thin film, Near-edge plasma treatment, Oxygen vacancy, Ultrahigh dielectric permittivity",

author = "\{Di Zhang\}, Wen and Bing Li and Wang, \{Wei Wei\} and Wang, \{Xing Ya\} and Yan Cheng and Jiang, \{An Quan\}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2025.",

year = "2026",

month = dec,

doi = "10.1007/s40820-025-01841-x",

language = "英语",

volume = "18",

journal = "Nano-Micro Letters",

issn = "2311-6706",

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T1 - Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase

AU - Di Zhang, Wen

AU - Li, Bing

AU - Wang, Wei Wei

AU - Wang, Xing Ya

AU - Cheng, Yan

AU - Jiang, An Quan

N1 - Publisher Copyright: © The Author(s) 2025.

PY - 2026/12

Y1 - 2026/12

N2 - Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density of the capacitor is as high as 183 μC cm-2 at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 1012 without inducing dielectric breakdown.

AB - Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density of the capacitor is as high as 183 μC cm-2 at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 1012 without inducing dielectric breakdown.

KW - Charge storage

KW - HfZrO thin film

KW - Near-edge plasma treatment

KW - Oxygen vacancy

KW - Ultrahigh dielectric permittivity

UR - https://www.scopus.com/pages/publications/105011100302

U2 - 10.1007/s40820-025-01841-x

DO - 10.1007/s40820-025-01841-x

M3 - 文章

AN - SCOPUS:105011100302

SN - 2311-6706

VL - 18

JO - Nano-Micro Letters

JF - Nano-Micro Letters

IS - 1

M1 - 6

ER -

Ultrahigh Dielectric Permittivity of a Micron-Sized Hf_0.5Zr_0.5O₂ Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase

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Keywords

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