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Ultrafast optical modulation of the fluorescence from a single-photon emitter in silicon carbide

  • H. E. Mengting
  • , C. A.O. Yujing
  • , L. I.N. Junjie
  • , J. U. Zhiping
  • , W. U. Botao
  • , E. Wu*
  • *Corresponding author for this work
  • East China Normal University
  • Ltd.
  • CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journalArticlepeer-review

Abstract

The quest for the room-temperature optical transistor based on nonlinearities in single atoms or molecules is attracting a lot of attention. In this work, a single-photon emitter in cubic silicon carbide is verified that can operate as an optical switch at room temperature under pulsed green laser illumination with a near-infrared pulsed laser as the control gate. We demonstrated an ultrafast and reversible optical modulation with a high photoluminescence intensity suppression ratio up to 97.9% and a response time as short as 287.9 ± 5.7 ps. The current development provides insights for high-precision and ultrafast optical switches, with possibilities for integration with emerging electronic installations to realize more intelligent photoelectric integrated devices.

Original languageEnglish
Pages (from-to)941-946
Number of pages6
JournalPhotonics Research
Volume12
Issue number5
DOIs
StatePublished - May 2024

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