Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

Chengbin Li; Donghai Feng; Tianqing Jia; Haiyi Sun; Xiaoxi Li; Shizhen Xu; Xiaofeng Wang; Zhizhan Xu

doi:10.1016/j.ssc.2005.09.003

Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

Chengbin Li^*
, Donghai Feng
, Tianqing Jia
, Haiyi Sun
, Xiaoxi Li
, Shizhen Xu
, Xiaofeng Wang
, Zhizhan Xu

^*Corresponding author for this work

CAS - Shanghai Institute of Optics and Fine Mechanics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps.

Original language	English
Pages (from-to)	389-394
Number of pages	6
Journal	Solid State Communications
Volume	136
Issue number	7
DOIs	https://doi.org/10.1016/j.ssc.2005.09.003
State	Published - Nov 2005
Externally published	Yes

Keywords

A. ZnO thin film
B. Laser processing
E. Electron energy loss rate
E. Time-resolved optical measurement

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10.1016/j.ssc.2005.09.003

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title = "Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers",

abstract = "The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps.",

keywords = "A. ZnO thin film, B. Laser processing, E. Electron energy loss rate, E. Time-resolved optical measurement",

author = "Chengbin Li and Donghai Feng and Tianqing Jia and Haiyi Sun and Xiaoxi Li and Shizhen Xu and Xiaofeng Wang and Zhizhan Xu",

year = "2005",

month = nov,

doi = "10.1016/j.ssc.2005.09.003",

language = "英语",

volume = "136",

pages = "389--394",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

AU - Li, Chengbin

AU - Feng, Donghai

AU - Jia, Tianqing

AU - Sun, Haiyi

AU - Li, Xiaoxi

AU - Xu, Shizhen

AU - Wang, Xiaofeng

AU - Xu, Zhizhan

PY - 2005/11

Y1 - 2005/11

N2 - The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps.

AB - The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps.

KW - A. ZnO thin film

KW - B. Laser processing

KW - E. Electron energy loss rate

KW - E. Time-resolved optical measurement

UR - https://www.scopus.com/pages/publications/27344442461

U2 - 10.1016/j.ssc.2005.09.003

DO - 10.1016/j.ssc.2005.09.003

M3 - 文章

AN - SCOPUS:27344442461

SN - 0038-1098

VL - 136

SP - 389

EP - 394

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

Abstract

Keywords

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