TY - GEN
T1 - Ultra-Low On-Resistance TG-LDMOS With Three Separated Gates and High-k Dielectric Comparable to DG-LDMOS
AU - Jia, Chen
AU - Li, Xianglong
AU - Sun, Yabin
AU - Li, Xiaojin
AU - Liu, Yun
AU - Ding, Yanfang
AU - Shi, Yanling
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - In this paper, a novel ultralow specific on-resistance (Ron,sp) triple gate lateral double-diffused MOS (TG-LDMOS) and high-k (HK) gate dielectric is proposed which is simulated by TCAD tool. It is the main concern for LDMOS to optimize the trade-off relationship between the Breakdown Voltage (BV) and specific on-resistance (Ron,sp). Adding another vertical gate compared to double gate LDMOS (DG-LDMOS) will increase the route of current, thus decreasing resistance obviously. In addition, the HK gate dielectric can optimize the channel current, which also reduces resistance. It is found that the proposed device shows lower resistance of 30.2m O · cm2 (TG-LDMOS) and 25.4 m O.cm2(TG-LDMOS(k)) at the same BV=180V. The Ron,sp is 22.3% and 53.1% lower than that of DG-LDMOS, respectively. Compared with DG-LDMOS and TG-LDMOS, the TG-LDMOS(k) achieves better tradeoff between the BV and Ron,sp.
AB - In this paper, a novel ultralow specific on-resistance (Ron,sp) triple gate lateral double-diffused MOS (TG-LDMOS) and high-k (HK) gate dielectric is proposed which is simulated by TCAD tool. It is the main concern for LDMOS to optimize the trade-off relationship between the Breakdown Voltage (BV) and specific on-resistance (Ron,sp). Adding another vertical gate compared to double gate LDMOS (DG-LDMOS) will increase the route of current, thus decreasing resistance obviously. In addition, the HK gate dielectric can optimize the channel current, which also reduces resistance. It is found that the proposed device shows lower resistance of 30.2m O · cm2 (TG-LDMOS) and 25.4 m O.cm2(TG-LDMOS(k)) at the same BV=180V. The Ron,sp is 22.3% and 53.1% lower than that of DG-LDMOS, respectively. Compared with DG-LDMOS and TG-LDMOS, the TG-LDMOS(k) achieves better tradeoff between the BV and Ron,sp.
KW - Triple gate lateral double-diffused MOSFET (TG-LDMOS)
KW - breakdown voltage (BV)
KW - double gate lateral double-diffused MOSFET (DG-LDMOS)
KW - high-K (HK)
KW - sp)
KW - specific on-resistance (Ron
UR - https://www.scopus.com/pages/publications/85136324216
U2 - 10.1109/ICET55676.2022.9825250
DO - 10.1109/ICET55676.2022.9825250
M3 - 会议稿件
AN - SCOPUS:85136324216
T3 - 2022 IEEE 5th International Conference on Electronics Technology, ICET 2022
SP - 48
EP - 51
BT - 2022 IEEE 5th International Conference on Electronics Technology, ICET 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th IEEE International Conference on Electronics Technology, ICET 2022
Y2 - 13 May 2022 through 16 May 2022
ER -