Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures

Zhihuan Yang; Qingfeng Zhan; Xiaojian Zhu; Yiwei Liu; Huali Yang; Benlin Hu; Jie Shang; Liang Pan; Bin Chen; Run Wei Li

doi:10.1209/0295-5075/108/58004

Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures

Zhihuan Yang
, Qingfeng Zhan
, Xiaojian Zhu
, Yiwei Liu
, Huali Yang
, Benlin Hu
, Jie Shang
, Liang Pan
, Bin Chen
, Run Wei Li

CAS - Ningbo Institute of Material Technology and Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We demonstrated that the formation of magnetic conductive filaments in Co/ZnO/Fe sandwich structures can be employed to produce a nanoscale magnetic tunnel junction (MTJ) and control the tunneling magnetoresistance (TMR). The pristine Co/ZnO/Fe structures with a 100nm thick ZnO layer do not exhibit any remarkable TMR. Under voltage sweeps performed on the sandwich devices, Co conductive filaments were grown in a ZnO layer, which leads to the formation of nanoscale Co/ZnO/Fe MTJs and the occurrence of TMR. In addition, a sign inversion of TMR was found in the nano-MTJs by carrying out the further voltage sweeps or varying the measuring bias voltage, which could be well understood in terms of the resonant tunneling caused by impurity scattering in a ZnO barrier.

Original language	English
Article number	58004
Journal	Europhysics Letters
Volume	108
Issue number	5
DOIs	https://doi.org/10.1209/0295-5075/108/58004
State	Published - 1 Dec 2014
Externally published	Yes

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title = "Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures",

abstract = "We demonstrated that the formation of magnetic conductive filaments in Co/ZnO/Fe sandwich structures can be employed to produce a nanoscale magnetic tunnel junction (MTJ) and control the tunneling magnetoresistance (TMR). The pristine Co/ZnO/Fe structures with a 100nm thick ZnO layer do not exhibit any remarkable TMR. Under voltage sweeps performed on the sandwich devices, Co conductive filaments were grown in a ZnO layer, which leads to the formation of nanoscale Co/ZnO/Fe MTJs and the occurrence of TMR. In addition, a sign inversion of TMR was found in the nano-MTJs by carrying out the further voltage sweeps or varying the measuring bias voltage, which could be well understood in terms of the resonant tunneling caused by impurity scattering in a ZnO barrier.",

author = "Zhihuan Yang and Qingfeng Zhan and Xiaojian Zhu and Yiwei Liu and Huali Yang and Benlin Hu and Jie Shang and Liang Pan and Bin Chen and Li, \{Run Wei\}",

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doi = "10.1209/0295-5075/108/58004",

language = "英语",

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TY - JOUR

T1 - Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures

AU - Yang, Zhihuan

AU - Zhan, Qingfeng

AU - Zhu, Xiaojian

AU - Liu, Yiwei

AU - Yang, Huali

AU - Hu, Benlin

AU - Shang, Jie

AU - Pan, Liang

AU - Chen, Bin

AU - Li, Run Wei

PY - 2014/12/1

Y1 - 2014/12/1

N2 - We demonstrated that the formation of magnetic conductive filaments in Co/ZnO/Fe sandwich structures can be employed to produce a nanoscale magnetic tunnel junction (MTJ) and control the tunneling magnetoresistance (TMR). The pristine Co/ZnO/Fe structures with a 100nm thick ZnO layer do not exhibit any remarkable TMR. Under voltage sweeps performed on the sandwich devices, Co conductive filaments were grown in a ZnO layer, which leads to the formation of nanoscale Co/ZnO/Fe MTJs and the occurrence of TMR. In addition, a sign inversion of TMR was found in the nano-MTJs by carrying out the further voltage sweeps or varying the measuring bias voltage, which could be well understood in terms of the resonant tunneling caused by impurity scattering in a ZnO barrier.

AB - We demonstrated that the formation of magnetic conductive filaments in Co/ZnO/Fe sandwich structures can be employed to produce a nanoscale magnetic tunnel junction (MTJ) and control the tunneling magnetoresistance (TMR). The pristine Co/ZnO/Fe structures with a 100nm thick ZnO layer do not exhibit any remarkable TMR. Under voltage sweeps performed on the sandwich devices, Co conductive filaments were grown in a ZnO layer, which leads to the formation of nanoscale Co/ZnO/Fe MTJs and the occurrence of TMR. In addition, a sign inversion of TMR was found in the nano-MTJs by carrying out the further voltage sweeps or varying the measuring bias voltage, which could be well understood in terms of the resonant tunneling caused by impurity scattering in a ZnO barrier.

UR - https://www.scopus.com/pages/publications/84918786416

U2 - 10.1209/0295-5075/108/58004

DO - 10.1209/0295-5075/108/58004

M3 - 文章

AN - SCOPUS:84918786416

SN - 0295-5075

VL - 108

JO - Europhysics Letters

JF - Europhysics Letters

IS - 5

M1 - 58004

ER -

Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures

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