TY - JOUR
T1 - Tunneling-barrier-controlled sensitive deep ultraviolet photodetectors based on van der Waals heterostructures
AU - Li, Xiang
AU - Li, Ziqing
AU - Hu, Jinhan
AU - Huang, Bangchi
AU - Shi, Jianlin
AU - Zhong, Zhipeng
AU - Zhuang, Ye Zhao
AU - Chen, Yan
AU - Wang, Jingli
AU - Li, Jianfeng
AU - Zhang, Lei
AU - Meng, Xiangjian
AU - Shi, Wu
AU - Chen, Shiyou
AU - Fang, Xiaosheng
AU - Huang, Hai
AU - Wang, Jianlu
AU - Chu, Junhao
N1 - Publisher Copyright:
© The Author(s) 2025.
PY - 2025/12
Y1 - 2025/12
N2 - Deep ultraviolet (DUV) photodetection usually relies on wide-bandgap semiconductors, which however face challenges in material growth and doping processes. In this work, we proposed and validated a photodetection scheme based on tunneling barrier modulation, achieving highly sensitive DUV photodetection. Using a two-dimensional van der Waals heterostructure, the device integrates MoS2 as the transporting layer for its high carrier mobility and low dark current, few-layered graphene (FLG) as the photon absorption layer, and hexagonal boron nitride (hBN) as the dielectric barrier. The device exhibits an photoresponsivity of 4.4 × 106A·W-1 and specific detectivity of 1.4 × 1017cm⋅Hz−1/2⋅W−1 for 250 nm DUV light, with a rejection ratio R250/R450 exceeding 106 for visible light. Unlike conventional photodetectors, the cutoff wavelength is determined by the tunneling barrier rather than the material bandgap. Additionally, this photodetection scheme has been extended to a wide range of materials, utilizing different charge transporting layer (e.g., MoS2, ReS2), barrier layer (e.g., hBN, Al2O3), and photon absorption materials (e.g., FLG, PdSe2, Au, Pd), showcasing its broad adaptability and potential for extensive application. Furthermore, the device has been successfully employed as a power meter for weak UV radiation (0.1 μW·cm-2) and for measuring solar UV irradiance with results matching the meteorological agency’s weather reports. Overall, this work introduces an effective approach for developing high-performance DUV photodetectors, highlighting significant potential for applications in the optoelectronic market.
AB - Deep ultraviolet (DUV) photodetection usually relies on wide-bandgap semiconductors, which however face challenges in material growth and doping processes. In this work, we proposed and validated a photodetection scheme based on tunneling barrier modulation, achieving highly sensitive DUV photodetection. Using a two-dimensional van der Waals heterostructure, the device integrates MoS2 as the transporting layer for its high carrier mobility and low dark current, few-layered graphene (FLG) as the photon absorption layer, and hexagonal boron nitride (hBN) as the dielectric barrier. The device exhibits an photoresponsivity of 4.4 × 106A·W-1 and specific detectivity of 1.4 × 1017cm⋅Hz−1/2⋅W−1 for 250 nm DUV light, with a rejection ratio R250/R450 exceeding 106 for visible light. Unlike conventional photodetectors, the cutoff wavelength is determined by the tunneling barrier rather than the material bandgap. Additionally, this photodetection scheme has been extended to a wide range of materials, utilizing different charge transporting layer (e.g., MoS2, ReS2), barrier layer (e.g., hBN, Al2O3), and photon absorption materials (e.g., FLG, PdSe2, Au, Pd), showcasing its broad adaptability and potential for extensive application. Furthermore, the device has been successfully employed as a power meter for weak UV radiation (0.1 μW·cm-2) and for measuring solar UV irradiance with results matching the meteorological agency’s weather reports. Overall, this work introduces an effective approach for developing high-performance DUV photodetectors, highlighting significant potential for applications in the optoelectronic market.
UR - https://www.scopus.com/pages/publications/86000091143
U2 - 10.1038/s41467-025-56886-8
DO - 10.1038/s41467-025-56886-8
M3 - 文章
C2 - 40044650
AN - SCOPUS:86000091143
SN - 2041-1723
VL - 16
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 2209
ER -