Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films

S. Asanuma; P. H. Xiang; H. Yamada; H. Sato; I. H. Inoue; H. Akoh; A. Sawa; K. Ueno; H. Shimotani; H. Yuan; M. Kawasaki; Y. Iwasa

doi:10.1063/1.3496458

Tuning of the metal-insulator transition in electrolyte-gated NdNiO ₃ thin films

S. Asanuma, P. H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, Y. Iwasa

Research output: Contribution to journal › Article › peer-review

104 Scopus citations

Abstract

We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO₃ through a large effective capacitance of the electric double layer at the electrolyte/NdNiO ₃ interface. The metal-insulator transition temperature (TMI) of NdNiO₃ is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V _G). The shift in TMI (Δ TMI) is larger for thinner NdNiO ₃; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO₃ is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

Original language	English
Article number	142110
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3496458
State	Published - 4 Oct 2010
Externally published	Yes

Access to Document

10.1063/1.3496458

Cite this

@article{eb0a1008adf14d848c09afdd3e412798,

title = "Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films",

abstract = "We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.",

author = "S. Asanuma and Xiang, \{P. H.\} and H. Yamada and H. Sato and Inoue, \{I. H.\} and H. Akoh and A. Sawa and K. Ueno and H. Shimotani and H. Yuan and M. Kawasaki and Y. Iwasa",

year = "2010",

month = oct,

day = "4",

doi = "10.1063/1.3496458",

language = "英语",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films

AU - Asanuma, S.

AU - Xiang, P. H.

AU - Yamada, H.

AU - Sato, H.

AU - Inoue, I. H.

AU - Akoh, H.

AU - Sawa, A.

AU - Ueno, K.

AU - Shimotani, H.

AU - Yuan, H.

AU - Kawasaki, M.

AU - Iwasa, Y.

PY - 2010/10/4

Y1 - 2010/10/4

N2 - We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

AB - We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

UR - https://www.scopus.com/pages/publications/77958036049

U2 - 10.1063/1.3496458

DO - 10.1063/1.3496458

M3 - 文章

AN - SCOPUS:77958036049

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142110

ER -

Tuning of the metal-insulator transition in electrolyte-gated NdNiO ₃ thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this