Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet

Yang Mei; Rong Bin Xu; Guo En Weng; Huan Xu; Lei Ying Ying; Zhi Wei Zheng; Hao Long; Bao Ping Zhang; Werner Hofmann; Jian Ping Liu; Jian Zhang; Mo Li; Jian Zhang

doi:10.1063/1.4994945

Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet

Yang Mei
, Rong Bin Xu
, Guo En Weng
, Huan Xu
, Lei Ying Ying
, Zhi Wei Zheng
, Hao Long
, Bao Ping Zhang^*
, Werner Hofmann
, Jian Ping Liu
, Jian Zhang
, Mo Li
, Jian Zhang

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to 435 nm (violet). The MC light emitter is featured with a double dielectric distributed Bragg reflector structure and a copper substrate fabricated using substrate transfer and laser lift off techniques. By utilizing an InGaN QD active layer with a tunable broad emission spectrum and a Fabry-Pérot cavity which allows multi-longitudinal mode resonating, the emission spectrum could be tuned among several particular cavity modes, which are decided by the gain enhancement factor. In addition, both the enhancement and suppression of MC emission modes caused by the gain enhancement factor were observed in a single MC device. As the first electrically driven III-V nitride semiconductor based tunable MC light emitter with a tuning range of 129 nm, the device is promising for applications such as in wide-gamut compact displays and projectors.

Original language	English
Article number	121107
Journal	Applied Physics Letters
Volume	111
Issue number	12
DOIs	https://doi.org/10.1063/1.4994945
State	Published - 18 Sep 2017

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@article{efbb9dc173474e0c98db72d20264920d,

title = "Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet",

abstract = "An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to 435 nm (violet). The MC light emitter is featured with a double dielectric distributed Bragg reflector structure and a copper substrate fabricated using substrate transfer and laser lift off techniques. By utilizing an InGaN QD active layer with a tunable broad emission spectrum and a Fabry-P{\'e}rot cavity which allows multi-longitudinal mode resonating, the emission spectrum could be tuned among several particular cavity modes, which are decided by the gain enhancement factor. In addition, both the enhancement and suppression of MC emission modes caused by the gain enhancement factor were observed in a single MC device. As the first electrically driven III-V nitride semiconductor based tunable MC light emitter with a tuning range of 129 nm, the device is promising for applications such as in wide-gamut compact displays and projectors.",

author = "Yang Mei and Xu, \{Rong Bin\} and Weng, \{Guo En\} and Huan Xu and Ying, \{Lei Ying\} and Zheng, \{Zhi Wei\} and Hao Long and Zhang, \{Bao Ping\} and Werner Hofmann and Liu, \{Jian Ping\} and Jian Zhang and Mo Li and Jian Zhang",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = sep,

day = "18",

doi = "10.1063/1.4994945",

language = "英语",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet

AU - Mei, Yang

AU - Xu, Rong Bin

AU - Weng, Guo En

AU - Xu, Huan

AU - Ying, Lei Ying

AU - Zheng, Zhi Wei

AU - Long, Hao

AU - Zhang, Bao Ping

AU - Hofmann, Werner

AU - Liu, Jian Ping

AU - Zhang, Jian

AU - Li, Mo

AU - Zhang, Jian

PY - 2017/9/18

Y1 - 2017/9/18

N2 - An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to 435 nm (violet). The MC light emitter is featured with a double dielectric distributed Bragg reflector structure and a copper substrate fabricated using substrate transfer and laser lift off techniques. By utilizing an InGaN QD active layer with a tunable broad emission spectrum and a Fabry-Pérot cavity which allows multi-longitudinal mode resonating, the emission spectrum could be tuned among several particular cavity modes, which are decided by the gain enhancement factor. In addition, both the enhancement and suppression of MC emission modes caused by the gain enhancement factor were observed in a single MC device. As the first electrically driven III-V nitride semiconductor based tunable MC light emitter with a tuning range of 129 nm, the device is promising for applications such as in wide-gamut compact displays and projectors.

AB - An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to 435 nm (violet). The MC light emitter is featured with a double dielectric distributed Bragg reflector structure and a copper substrate fabricated using substrate transfer and laser lift off techniques. By utilizing an InGaN QD active layer with a tunable broad emission spectrum and a Fabry-Pérot cavity which allows multi-longitudinal mode resonating, the emission spectrum could be tuned among several particular cavity modes, which are decided by the gain enhancement factor. In addition, both the enhancement and suppression of MC emission modes caused by the gain enhancement factor were observed in a single MC device. As the first electrically driven III-V nitride semiconductor based tunable MC light emitter with a tuning range of 129 nm, the device is promising for applications such as in wide-gamut compact displays and projectors.

UR - https://www.scopus.com/pages/publications/85029851557

U2 - 10.1063/1.4994945

DO - 10.1063/1.4994945

M3 - 文章

AN - SCOPUS:85029851557

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121107

ER -

Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet

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