Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor

  • Chong An Di
  • , Jing Li
  • , Gui Yu*
  • , Yi Xiao
  • , Yunlong Guo
  • , Yunqi Liu
  • , Xuhong Qian
  • , Daoben Zhu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

(Chemical Equation Presented) Two trifluoromethyltriphenodioxazines were efficiently synthesized as active materials for n-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Air-stable and high-performance thin film transistors based on the two compounds were fabricated.

Original languageEnglish
Pages (from-to)3025-3028
Number of pages4
JournalOrganic Letters
Volume10
Issue number14
DOIs
StatePublished - 2008
Externally publishedYes

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