Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-xN/GaN heterointerfaces

Z. W. Zheng; B. Shen; Y. S. Gui; C. P. Jiang; N. Tang; R. Zhang; Y. Shi; Y. D. Zheng; S. L. Guo; G. Z. Zheng; J. H. Chu; T. Someya; Y. Arakawa

doi:10.1063/1.1557772

Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at Al_xGa_1-xN/GaN heterointerfaces

Z. W. Zheng, B. Shen, Y. S. Gui, C. P. Jiang, N. Tang, R. Zhang, Y. Shi, Y. D. Zheng, S. L. Guo, G. Z. Zheng, J. H. Chu, T. Someya, Y. Arakawa

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16 Scopus citations

Abstract

Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at Al_xGa_1-x/GaN heterointerfaces was studied. Strong Shubnikov-de Haas oscillations with the double periodicity were observed using magnetoresistence measurements at low temperatures and high magnetic fields. It was found that the mobility of the 2DEG in the second subband was much higher than that in the first one. It was explained that the interface roughness scattering and alloy disorder scattering possesses much stronger influence on transport properties of the 2DEG in the first subband than that in the second subband in the heterostructures.

Original language	English
Pages (from-to)	1872-1874
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	12
DOIs	https://doi.org/10.1063/1.1557772
State	Published - 24 Mar 2003
Externally published	Yes

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Zheng, Z. W., Shen, B., Gui, Y. S., Jiang, C. P., Tang, N., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Zheng, G. Z., Chu, J. H., Someya, T., & Arakawa, Y. (2003). Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at Al_xGa_1-xN/GaN heterointerfaces. Applied Physics Letters, 82(12), 1872-1874. https://doi.org/10.1063/1.1557772

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title = "Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-xN/GaN heterointerfaces",

abstract = "Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-x/GaN heterointerfaces was studied. Strong Shubnikov-de Haas oscillations with the double periodicity were observed using magnetoresistence measurements at low temperatures and high magnetic fields. It was found that the mobility of the 2DEG in the second subband was much higher than that in the first one. It was explained that the interface roughness scattering and alloy disorder scattering possesses much stronger influence on transport properties of the 2DEG in the first subband than that in the second subband in the heterostructures.",

author = "Zheng, \{Z. W.\} and B. Shen and Gui, \{Y. S.\} and Jiang, \{C. P.\} and N. Tang and R. Zhang and Y. Shi and Zheng, \{Y. D.\} and Guo, \{S. L.\} and Zheng, \{G. Z.\} and Chu, \{J. H.\} and T. Someya and Y. Arakawa",

year = "2003",

month = mar,

day = "24",

doi = "10.1063/1.1557772",

language = "英语",

volume = "82",

pages = "1872--1874",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

number = "12",

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TY - JOUR

T1 - Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-xN/GaN heterointerfaces

AU - Zheng, Z. W.

AU - Shen, B.

AU - Gui, Y. S.

AU - Jiang, C. P.

AU - Tang, N.

AU - Zhang, R.

AU - Shi, Y.

AU - Zheng, Y. D.

AU - Guo, S. L.

AU - Zheng, G. Z.

AU - Chu, J. H.

AU - Someya, T.

AU - Arakawa, Y.

PY - 2003/3/24

Y1 - 2003/3/24

N2 - Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-x/GaN heterointerfaces was studied. Strong Shubnikov-de Haas oscillations with the double periodicity were observed using magnetoresistence measurements at low temperatures and high magnetic fields. It was found that the mobility of the 2DEG in the second subband was much higher than that in the first one. It was explained that the interface roughness scattering and alloy disorder scattering possesses much stronger influence on transport properties of the 2DEG in the first subband than that in the second subband in the heterostructures.

AB - Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-x/GaN heterointerfaces was studied. Strong Shubnikov-de Haas oscillations with the double periodicity were observed using magnetoresistence measurements at low temperatures and high magnetic fields. It was found that the mobility of the 2DEG in the second subband was much higher than that in the first one. It was explained that the interface roughness scattering and alloy disorder scattering possesses much stronger influence on transport properties of the 2DEG in the first subband than that in the second subband in the heterostructures.

UR - https://www.scopus.com/pages/publications/0037464194

U2 - 10.1063/1.1557772

DO - 10.1063/1.1557772

M3 - 文章

AN - SCOPUS:0037464194

SN - 0003-6951

VL - 82

SP - 1872

EP - 1874

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at Al_xGa_1-xN/GaN heterointerfaces

Abstract

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