Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Bo Shen; Ning Tang; Jie Lu; Zewei Zheng; Dunjun Chen; Yongsheng Gui; Qiu Zhijun; Chunping Jiang; Shaoling Guo; Junhao Chu; Rong Zhang; Youdou Zheng

Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures

Bo Shen, Ning Tang, Jie Lu, Zewei Zheng, Dunjun Chen, Yongsheng Gui, Qiu Zhijun, Chunping Jiang, Shaoling Guo, Junhao Chu, Rong Zhang, Youdou Zheng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Magnetotransport properties of modulation-doped Al_xGa _1-xN/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Mass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 × 10 ¹²cm^-2, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 × 10^-14 s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG, and the spin splitting of the 2DEG have also been studied.

Original language	English
Title of host publication	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Editors	X.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	166-170
Number of pages	5
Volume	4
ISBN (Print)	7309039157
State	Published - 2004
Externally published	Yes
Event	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China Duration: 15 Mar 2004 → 16 Mar 2004

Conference

Conference	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Country/Territory	China
City	Shanghai
Period	15/03/04 → 16/03/04

Cite this

Shen, B., Tang, N., Lu, J., Zheng, Z., Chen, D., Gui, Y., Zhijun, Q., Jiang, C., Guo, S., Chu, J., Zhang, R., & Zheng, Y. (2004). Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures. In X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (Eds.), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (Vol. 4, pp. 166-170). Institute of Electrical and Electronics Engineers Inc..

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title = "Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures",

abstract = "Magnetotransport properties of modulation-doped AlxGa 1-xN/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Mass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 × 10 12cm-2, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 × 10-14 s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG, and the spin splitting of the 2DEG have also been studied.",

author = "Bo Shen and Ning Tang and Jie Lu and Zewei Zheng and Dunjun Chen and Yongsheng Gui and Qiu Zhijun and Chunping Jiang and Shaoling Guo and Junhao Chu and Rong Zhang and Youdou Zheng",

year = "2004",

language = "英语",

isbn = "7309039157",

volume = "4",

pages = "166--170",

editor = "X.P. Qu and G.P. Ru and B.Z. Li and B. Mizuno and H. Iwai",

booktitle = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "美国",

note = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 ; Conference date: 15-03-2004 Through 16-03-2004",

}

Shen, B, Tang, N, Lu, J, Zheng, Z, Chen, D, Gui, Y, Zhijun, Q, Jiang, C, Guo, S, Chu, J, Zhang, R & Zheng, Y 2004, Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures. in XP Qu, GP Ru, BZ Li, B Mizuno & H Iwai (eds), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. vol. 4, Institute of Electrical and Electronics Engineers Inc., pp. 166-170, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Shanghai, China, 15/03/04.

Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures. / Shen, Bo; Tang, Ning; Lu, Jie et al.
Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. ed. / X.P. Qu; G.P. Ru; B.Z. Li; B. Mizuno; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. p. 166-170.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

AU - Shen, Bo

AU - Tang, Ning

AU - Lu, Jie

AU - Zheng, Zewei

AU - Chen, Dunjun

AU - Gui, Yongsheng

AU - Zhijun, Qiu

AU - Jiang, Chunping

AU - Guo, Shaoling

AU - Chu, Junhao

AU - Zhang, Rong

AU - Zheng, Youdou

PY - 2004

Y1 - 2004

N2 - Magnetotransport properties of modulation-doped AlxGa 1-xN/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Mass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 × 10 12cm-2, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 × 10-14 s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG, and the spin splitting of the 2DEG have also been studied.

AB - Magnetotransport properties of modulation-doped AlxGa 1-xN/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Mass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 × 10 12cm-2, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 × 10-14 s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG, and the spin splitting of the 2DEG have also been studied.

UR - https://www.scopus.com/pages/publications/3543077649

M3 - 会议稿件

AN - SCOPUS:3543077649

SN - 7309039157

VL - 4

SP - 166

EP - 170

BT - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

A2 - Qu, X.P.

A2 - Ru, G.P.

A2 - Li, B.Z.

A2 - Mizuno, B.

A2 - Iwai, H.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Y2 - 15 March 2004 through 16 March 2004

ER -

Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures

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