@inproceedings{fddb659e1b84469ebb56ab148d99f673,
title = "Transport properties of InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate",
abstract = "Variable magnetic field Hall measurement has been used to investigate the transport properties in InAlAs/InGaAs metamorphic high electron mobility transistors (MMHEMT) on GaAs substrate in the temperature range from 1.5 to 90K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multi-carrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS+MCF approach show two-dimensional electronic behavior. The two-dimensional electrons, with mobility ∼3×104cm2/Vs and a sheet density ∼2.3×1012cm-2, are obtained and come from the quantum well. The temperature dependent evolution of the electron mobility indicates that alloy scattering dominates at higher temperature.",
author = "Jiang, \{C. P.\} and Li, \{X. J.\} and Guo, \{S. L.\} and Q. Sun and Huang, \{Z. M.\} and Chu, \{J. H.\}",
note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",
year = "2001",
doi = "10.1109/ICSICT.2001.982084",
language = "英语",
series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1077--1080",
editor = "Hiroshi Iwai and Xin-Ping Qu and Bing-Zong Li and Guo-Ping Ru and Paul Yu",
booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
address = "美国",
}